DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | Microsemi |
Parts packaging code | DIMM |
package instruction | DIMM, |
Contacts | 184 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
access mode | FOUR BANK PAGE BURST |
Maximum access time | 0.75 ns |
Other features | AUTO/SELF REFRESH |
JESD-30 code | R-XDMA-N184 |
memory density | 19327352832 bit |
Memory IC Type | DDR DRAM MODULE |
memory width | 72 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 184 |
word count | 268435456 words |
character code | 256000000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 256MX72 |
Package body material | UNSPECIFIED |
encapsulated code | DIMM |
Package shape | RECTANGULAR |
Package form | MICROELECTRONIC ASSEMBLY |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Certification status | Not Qualified |
self refresh | YES |
Maximum supply voltage (Vsup) | 2.7 V |
Minimum supply voltage (Vsup) | 2.3 V |
Nominal supply voltage (Vsup) | 2.5 V |
surface mount | NO |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal form | NO LEAD |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Base Number Matches | 1 |
WED3EG72256S265JD3-M | WED3EG72256S202JD3-M | WED3EG72256S262JD3-M | |
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Description | DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 | DDR DRAM Module, 256MX72, 0.8ns, CMOS, DIMM-184 | DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 |
Is it Rohs certified? | incompatible | incompatible | incompatible |
package instruction | DIMM, | DIMM, | DIMM, |
Reach Compliance Code | compliant | unknown | compliant |
access mode | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
Maximum access time | 0.75 ns | 0.8 ns | 0.75 ns |
Other features | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
JESD-30 code | R-XDMA-N184 | R-XDMA-N184 | R-XDMA-N184 |
memory density | 19327352832 bit | 19327352832 bit | 19327352832 bit |
Memory IC Type | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE |
memory width | 72 | 72 | 72 |
Number of functions | 1 | 1 | 1 |
Number of ports | 1 | 1 | 1 |
Number of terminals | 184 | 184 | 184 |
word count | 268435456 words | 268435456 words | 268435456 words |
character code | 256000000 | 256000000 | 256000000 |
Operating mode | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
Maximum operating temperature | 70 °C | 70 °C | 70 °C |
organize | 256MX72 | 256MX72 | 256MX72 |
Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
encapsulated code | DIMM | DIMM | DIMM |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Certification status | Not Qualified | Not Qualified | Not Qualified |
self refresh | YES | YES | YES |
Maximum supply voltage (Vsup) | 2.7 V | 2.7 V | 2.7 V |
Minimum supply voltage (Vsup) | 2.3 V | 2.3 V | 2.3 V |
Nominal supply voltage (Vsup) | 2.5 V | 2.5 V | 2.5 V |
surface mount | NO | NO | NO |
technology | CMOS | CMOS | CMOS |
Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL |
Terminal form | NO LEAD | NO LEAD | NO LEAD |
Terminal location | DUAL | DUAL | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Is it lead-free? | Contains lead | - | Contains lead |
Maker | Microsemi | - | Microsemi |
Parts packaging code | DIMM | - | DIMM |
Contacts | 184 | - | 184 |
ECCN code | EAR99 | - | EAR99 |