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SMBG58C-M3/52

Description
Trans Voltage Suppressor Diode
CategoryDiscrete semiconductor    diode   
File Size90KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

SMBG58C-M3/52 Overview

Trans Voltage Suppressor Diode

SMBG58C-M3/52 Parametric

Parameter NameAttribute value
MakerVishay
Reach Compliance Codeunknown
ECCN codeEAR99
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
Base Number Matches1
SMBG5.0A thru SMBG188CA
www.vishay.com
Vishay General Semiconductor
Surface Mount T
RANS
Z
ORB®
Transient Voltage Supressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 600 W peak pulse power capability with a 10/1000 μs
waveform, repetitive rate (duty cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
DO-215AA (SMBG)
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
V
WM
P
PPM
I
FSM
(uni-directional only)
T
J
max.
5.0 V to 188 V
600 W
100 A
150 °C
Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLCIATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use C or CA suffix (e.g.
SMBG10CA).
Electrical characteristics apply in both directions.
Case:
DO-215AA (SMBG)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
Polarity:
For uni-directional types the band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1)
Peak pulse current with a 10/1000 μs waveform
Peak forward surge current 8.3 ms single half sine-wave
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2)
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
SYMBOL
P
PPM (1)(2)
I
PPM (1)
I
FSM (2)
T
J
, T
STG
VALUE
600
See next table
60
- 65 to + 175
UNIT
W
A
A
°C
Revision: 20-Dec-11
Document Number: 89421
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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