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S29NS128PABBJW000

Description
IC,EEPROM,NOR FLASH,8MX16,CMOS,BGA,44PIN,PLASTIC
Categorystorage    storage   
File Size3MB,86 Pages
ManufacturerCypress Semiconductor
Environmental Compliance
Download Datasheet Parametric View All

S29NS128PABBJW000 Overview

IC,EEPROM,NOR FLASH,8MX16,CMOS,BGA,44PIN,PLASTIC

S29NS128PABBJW000 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCypress Semiconductor
Reach Compliance Codecompliant
Maximum access time80 ns
startup blockTOP
command user interfaceYES
Universal Flash InterfaceYES
Data pollingYES
JESD-30 codeR-PBGA-B44
memory density134217728 bit
Memory IC TypeFLASH
Number of departments/size4,127
Number of terminals44
word count8388608 words
character code8000000
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize8MX16
Package body materialPLASTIC/EPOXY
encapsulated codeFBGA
Encapsulate equivalent codeBGA44,8X14,20
Package shapeRECTANGULAR
Package formGRID ARRAY, FINE PITCH
Parallel/SerialPARALLEL
power supply1.8 V
Certification statusNot Qualified
ready/busyYES
Department size16K,64K
Maximum standby current0.00007 A
Maximum slew rate0.08 mA
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal formBALL
Terminal pitch0.5 mm
Terminal locationBOTTOM
switch bitYES
typeNOR TYPE
Base Number Matches1
S29NS-P MirrorBit
®
Flash Family
S29NS512P S29NS256P S29NS128P
512/256/128 Mb (32/16/8 M x 16 bit), 1.8 V Burst Simultaneous
Read/Write, Multiplexed MirrorBit Flash Memory
Data Sheet
(Advance Information)
S29NS-P MirrorBit
®
Flash Family Cover Sheet
Notice to Readers:
This document states the current technical specifications regarding the Spansion
product(s) described herein. Each product described herein may be designated as Advance Information,
Preliminary, or Full Production. See
Notice On Data Sheet Designations
for definitions.
Publication Number
S29NS-P_00
Revision
A
Amendment
3
Issue Date
June 14, 2007
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