|
STK10C68-L35M |
STK10C68-5C30M |
STK10C68-L45M |
STK10C68-5L30M |
STK10C68-C35M |
STK10C68-C45M |
STK10C68-C55M |
STK10C68-L30M |
STK10C68-C30M |
STK10C68-L55M |
Description |
8KX8 NON-VOLATILE SRAM, 35ns, CQCC28, CERAMIC, LCC-28 |
8KX8 NON-VOLATILE SRAM, 30ns, CDIP28, 0.300 INCH, CERAMIC, DIP-28 |
8KX8 NON-VOLATILE SRAM, 45ns, CQCC28, CERAMIC, LCC-28 |
8KX8 NON-VOLATILE SRAM, 30ns, CQCC28, CERAMIC, LCC-28 |
8KX8 NON-VOLATILE SRAM, 35ns, CDIP28, 0.300 INCH, CERAMIC, DIP-28 |
8KX8 NON-VOLATILE SRAM, 45ns, CDIP28, 0.300 INCH, CERAMIC, DIP-28 |
8KX8 NON-VOLATILE SRAM, 55ns, CDIP28, 0.300 INCH, CERAMIC, DIP-28 |
8KX8 NON-VOLATILE SRAM, 30ns, CQCC28, CERAMIC, LCC-28 |
8KX8 NON-VOLATILE SRAM, 30ns, CDIP28, 0.300 INCH, CERAMIC, DIP-28 |
8KX8 NON-VOLATILE SRAM, 55ns, CQCC28, CERAMIC, LCC-28 |
Is it Rohs certified? |
incompatible |
incompatible |
incompatible |
incompatible |
incompatible |
incompatible |
incompatible |
incompatible |
incompatible |
incompatible |
Parts packaging code |
QLCC |
DIP |
QLCC |
QLCC |
DIP |
DIP |
DIP |
QLCC |
DIP |
QLCC |
package instruction |
QCCN, LCC28(UNSPEC) |
DIP, DIP28,.3 |
QCCN, LCC28(UNSPEC) |
QCCN, LCC28,.35X.55 |
DIP, DIP28,.3 |
DIP, DIP28,.3 |
DIP, DIP28,.3 |
QCCN, LCC28(UNSPEC) |
DIP, DIP28,.3 |
QCCN, LCC28(UNSPEC) |
Contacts |
28 |
28 |
28 |
28 |
28 |
28 |
28 |
28 |
28 |
28 |
Reach Compliance Code |
unknown |
unknown |
unknown |
unknown |
unknown |
unknown |
unknown |
unknown |
unknown |
unknown |
ECCN code |
3A001.A.2.C |
3A001.A.2.C |
3A001.A.2.C |
3A001.A.2.C |
3A001.A.2.C |
3A001.A.2.C |
3A001.A.2.C |
3A001.A.2.C |
3A001.A.2.C |
3A001.A.2.C |
Maximum access time |
35 ns |
30 ns |
45 ns |
30 ns |
35 ns |
45 ns |
55 ns |
30 ns |
30 ns |
55 ns |
Other features |
EEPROM HARDWARE STORE/RECALL; RETENTION/ENDURANCE = 10 YEARS/10000 CYCLES |
EEPROM HARDWARE STORE/RECALL; RETENTION/ENDURANCE = 10 YEARS/100000 CYCLES |
EEPROM HARDWARE STORE/RECALL; RETENTION/ENDURANCE = 10 YEARS/10000 CYCLES |
EEPROM HARDWARE STORE/RECALL; RETENTION/ENDURANCE = 10 YEARS/100000 CYCLES |
EEPROM HARDWARE STORE/RECALL; RETENTION/ENDURANCE = 10 YEARS/10000 CYCLES |
EEPROM HARDWARE STORE/RECALL; RETENTION/ENDURANCE = 10 YEARS/10000 CYCLES |
EEPROM HARDWARE STORE/RECALL; RETENTION/ENDURANCE = 10 YEARS/10000 CYCLES |
EEPROM HARDWARE STORE/RECALL; RETENTION/ENDURANCE = 10 YEARS/10000 CYCLES |
EEPROM HARDWARE STORE/RECALL; RETENTION/ENDURANCE = 10 YEARS/10000 CYCLES |
EEPROM HARDWARE STORE/RECALL; RETENTION/ENDURANCE = 10 YEARS/10000 CYCLES |
JESD-30 code |
R-CQCC-N28 |
R-CDIP-T28 |
R-CQCC-N28 |
R-CQCC-N28 |
R-CDIP-T28 |
R-CDIP-T28 |
R-CDIP-T28 |
R-CQCC-N28 |
R-CDIP-T28 |
R-CQCC-N28 |
JESD-609 code |
e0 |
e0 |
e0 |
e0 |
e0 |
e0 |
e0 |
e0 |
e0 |
e0 |
length |
13.97 mm |
35.56 mm |
13.97 mm |
13.97 mm |
35.56 mm |
35.56 mm |
35.56 mm |
13.97 mm |
35.56 mm |
13.97 mm |
memory density |
65536 bit |
65536 bit |
65536 bit |
65536 bit |
65536 bit |
65536 bit |
65536 bit |
65536 bit |
65536 bit |
65536 bit |
Memory IC Type |
NON-VOLATILE SRAM |
NON-VOLATILE SRAM |
NON-VOLATILE SRAM |
NON-VOLATILE SRAM |
NON-VOLATILE SRAM |
NON-VOLATILE SRAM |
NON-VOLATILE SRAM |
NON-VOLATILE SRAM |
NON-VOLATILE SRAM |
NON-VOLATILE SRAM |
memory width |
8 |
8 |
8 |
8 |
8 |
8 |
8 |
8 |
8 |
8 |
Number of functions |
1 |
1 |
1 |
1 |
1 |
1 |
1 |
1 |
1 |
1 |
Number of ports |
1 |
1 |
1 |
1 |
1 |
1 |
1 |
1 |
1 |
1 |
Number of terminals |
28 |
28 |
28 |
28 |
28 |
28 |
28 |
28 |
28 |
28 |
word count |
8192 words |
8192 words |
8192 words |
8192 words |
8192 words |
8192 words |
8192 words |
8192 words |
8192 words |
8192 words |
character code |
8000 |
8000 |
8000 |
8000 |
8000 |
8000 |
8000 |
8000 |
8000 |
8000 |
Operating mode |
ASYNCHRONOUS |
ASYNCHRONOUS |
ASYNCHRONOUS |
ASYNCHRONOUS |
ASYNCHRONOUS |
ASYNCHRONOUS |
ASYNCHRONOUS |
ASYNCHRONOUS |
ASYNCHRONOUS |
ASYNCHRONOUS |
Maximum operating temperature |
125 °C |
125 °C |
125 °C |
125 °C |
125 °C |
125 °C |
125 °C |
125 °C |
125 °C |
125 °C |
Minimum operating temperature |
-55 °C |
-55 °C |
-55 °C |
-55 °C |
-55 °C |
-55 °C |
-55 °C |
-55 °C |
-55 °C |
-55 °C |
organize |
8KX8 |
8KX8 |
8KX8 |
8KX8 |
8KX8 |
8KX8 |
8KX8 |
8KX8 |
8KX8 |
8KX8 |
Output characteristics |
3-STATE |
3-STATE |
3-STATE |
3-STATE |
3-STATE |
3-STATE |
3-STATE |
3-STATE |
3-STATE |
3-STATE |
Exportable |
YES |
YES |
YES |
YES |
YES |
YES |
YES |
YES |
YES |
YES |
Package body material |
CERAMIC, METAL-SEALED COFIRED |
CERAMIC, METAL-SEALED COFIRED |
CERAMIC, METAL-SEALED COFIRED |
CERAMIC, METAL-SEALED COFIRED |
CERAMIC, METAL-SEALED COFIRED |
CERAMIC, METAL-SEALED COFIRED |
CERAMIC, METAL-SEALED COFIRED |
CERAMIC, METAL-SEALED COFIRED |
CERAMIC, METAL-SEALED COFIRED |
CERAMIC, METAL-SEALED COFIRED |
encapsulated code |
QCCN |
DIP |
QCCN |
QCCN |
DIP |
DIP |
DIP |
QCCN |
DIP |
QCCN |
Encapsulate equivalent code |
LCC28(UNSPEC) |
DIP28,.3 |
LCC28(UNSPEC) |
LCC28,.35X.55 |
DIP28,.3 |
DIP28,.3 |
DIP28,.3 |
LCC28(UNSPEC) |
DIP28,.3 |
LCC28(UNSPEC) |
Package shape |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
Package form |
CHIP CARRIER |
IN-LINE |
CHIP CARRIER |
CHIP CARRIER |
IN-LINE |
IN-LINE |
IN-LINE |
CHIP CARRIER |
IN-LINE |
CHIP CARRIER |
Parallel/Serial |
PARALLEL |
PARALLEL |
PARALLEL |
PARALLEL |
PARALLEL |
PARALLEL |
PARALLEL |
PARALLEL |
PARALLEL |
PARALLEL |
Peak Reflow Temperature (Celsius) |
240 |
240 |
240 |
240 |
240 |
240 |
240 |
240 |
240 |
240 |
power supply |
5 V |
5 V |
5 V |
5 V |
5 V |
5 V |
5 V |
5 V |
5 V |
5 V |
Certification status |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
Filter level |
38535Q/M;38534H;883B |
38535Q/M;38534H;883B |
38535Q/M;38534H;883B |
38535Q/M;38534H;883B |
38535Q/M;38534H;883B |
38535Q/M;38534H;883B |
38535Q/M;38534H;883B |
38535Q/M;38534H;883B |
38535Q/M;38534H;883B |
38535Q/M;38534H;883B |
Maximum seat height |
2.286 mm |
4.2418 mm |
2.286 mm |
2.286 mm |
4.2418 mm |
4.2418 mm |
4.2418 mm |
2.286 mm |
4.2418 mm |
2.286 mm |
Maximum standby current |
0.002 A |
0.002 A |
0.002 A |
0.002 A |
0.002 A |
0.002 A |
0.002 A |
0.002 A |
0.002 A |
0.002 A |
Maximum slew rate |
0.08 mA |
0.085 mA |
0.075 mA |
0.085 mA |
0.08 mA |
0.075 mA |
0.07 mA |
0.085 mA |
0.085 mA |
0.07 mA |
Maximum supply voltage (Vsup) |
5.5 V |
5.5 V |
5.5 V |
5.5 V |
5.5 V |
5.5 V |
5.5 V |
5.5 V |
5.5 V |
5.5 V |
Minimum supply voltage (Vsup) |
4.5 V |
4.5 V |
4.5 V |
4.5 V |
4.5 V |
4.5 V |
4.5 V |
4.5 V |
4.5 V |
4.5 V |
Nominal supply voltage (Vsup) |
5 V |
5 V |
5 V |
5 V |
5 V |
5 V |
5 V |
5 V |
5 V |
5 V |
surface mount |
YES |
NO |
YES |
YES |
NO |
NO |
NO |
YES |
NO |
YES |
technology |
CMOS |
CMOS |
CMOS |
CMOS |
CMOS |
CMOS |
CMOS |
CMOS |
CMOS |
CMOS |
Temperature level |
MILITARY |
MILITARY |
MILITARY |
MILITARY |
MILITARY |
MILITARY |
MILITARY |
MILITARY |
MILITARY |
MILITARY |
Terminal surface |
Tin/Lead (Sn85Pb15) |
Tin/Lead (Sn85Pb15) |
Tin/Lead (Sn85Pb15) |
Tin/Lead (Sn85Pb15) |
Tin/Lead (Sn85Pb15) |
Tin/Lead (Sn85Pb15) |
Tin/Lead (Sn85Pb15) |
Tin/Lead (Sn85Pb15) |
Tin/Lead (Sn85Pb15) |
Tin/Lead (Sn85Pb15) |
Terminal form |
NO LEAD |
THROUGH-HOLE |
NO LEAD |
NO LEAD |
THROUGH-HOLE |
THROUGH-HOLE |
THROUGH-HOLE |
NO LEAD |
THROUGH-HOLE |
NO LEAD |
Terminal pitch |
1.27 mm |
2.54 mm |
1.27 mm |
1.27 mm |
2.54 mm |
2.54 mm |
2.54 mm |
1.27 mm |
2.54 mm |
1.27 mm |
Terminal location |
QUAD |
DUAL |
QUAD |
QUAD |
DUAL |
DUAL |
DUAL |
QUAD |
DUAL |
QUAD |
Maximum time at peak reflow temperature |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
width |
8.89 mm |
7.62 mm |
8.89 mm |
8.89 mm |
7.62 mm |
7.62 mm |
7.62 mm |
8.89 mm |
7.62 mm |
8.89 mm |
Maker |
Cypress Semiconductor |
- |
- |
Cypress Semiconductor |
Cypress Semiconductor |
Cypress Semiconductor |
Cypress Semiconductor |
Cypress Semiconductor |
Cypress Semiconductor |
Cypress Semiconductor |