11000mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, SO-8
Parameter Name | Attribute value |
Is it lead-free? | Lead free |
Is it Rohs certified? | conform to |
Maker | Rochester Electronics |
Parts packaging code | SOT |
package instruction | LEAD FREE, SO-8 |
Contacts | 8 |
Reach Compliance Code | unknown |
Other features | LOGIC LEVEL COMPATIBLE |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 30 V |
Maximum drain current (ID) | 11 A |
Maximum drain-source on-resistance | 0.0125 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-PDSO-G8 |
JESD-609 code | e3 |
Humidity sensitivity level | 1 |
Number of components | 1 |
Number of terminals | 8 |
Operating mode | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | 260 |
Polarity/channel type | N-CHANNEL |
Certification status | COMMERCIAL |
surface mount | YES |
Terminal surface | MATTE TIN |
Terminal form | GULL WING |
Terminal location | DUAL |
Maximum time at peak reflow temperature | 30 |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |