Power Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
| Parameter Name | Attribute value |
| Maker | Diodes Incorporated |
| package instruction | SMALL OUTLINE, R-PDSO-G4 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 0.5 A |
| Collector-emitter maximum voltage | 30 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 5000 |
| JESD-30 code | R-PDSO-G4 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 4 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | PNP |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | MATTE TIN |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 40 |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 125 MHz |
| Base Number Matches | 1 |
| FTZA63 | |
|---|---|
| Description | Power Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin |
| Maker | Diodes Incorporated |
| package instruction | SMALL OUTLINE, R-PDSO-G4 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 0.5 A |
| Collector-emitter maximum voltage | 30 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 5000 |
| JESD-30 code | R-PDSO-G4 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 4 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | PNP |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | MATTE TIN |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 40 |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 125 MHz |
| Base Number Matches | 1 |
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