1N5402 datasheet, PDF - EEWORLD Datasheet

1N5402: Description3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD; CategoryDiscrete semiconductor diode; File Size50KB，3 Pages; ManufacturerWeitron Technology; Websitehttp://weitron.com.tw/

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3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD

Parameter Name	Attribute value
Maker	Weitron Technology
Reach Compliance Code	unknow
Other features	HIGH RELIABILITY
application	GENERAL PURPOSE
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JEDEC-95 code	DO-201AD
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	200 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Maximum output current	3 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	200 V
Maximum reverse current	5 µA
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

	1N5402	1N5406	1N5401	1N5408	1N5407	1N5404
Description	3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 600 V, SILICON, RECTIFIER DIODE	3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD	RECTIFIER DIODE,1KV V(RRM),DO-204AE	3 A, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD
Maker	Weitron Technology	Weitron Technology	Weitron Technology	Weitron Technology	Weitron Technology	Weitron Technology
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow

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