BZD27-C430T/R datasheet, PDF - EEWORLD Datasheet

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BZD27-C430T/R: DescriptionDIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor; CategoryDiscrete semiconductor diode; File Size67KB，3 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BZD27-C430T/R Overview

DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor

BZD27-C430T/R Parametric

Parameter Name	Attribute value
Maker	NXP
package instruction	O-LELF-R2
Reach Compliance Code	unknown
ECCN code	EAR99
Minimum breakdown voltage	400 V
Shell connection	ISOLATED
Maximum clamping voltage	603 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	O-LELF-R2
Maximum non-repetitive peak reverse power dissipation	300 W
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
polarity	UNIDIRECTIONAL
Maximum power dissipation	0.8 W
Certification status	Not Qualified
Maximum reverse current	5 µA
surface mount	YES
technology	AVALANCHE
Terminal form	WRAP AROUND
Terminal location	END
Base Number Matches	1

BZD27-C430T/R Related Products

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Description	DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor	DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor	DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor	DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor	DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor	DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor	DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor
package instruction	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LELF-R2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Minimum breakdown voltage	400 V	310 V	440 V	480 V	280 V	370 V	340 V
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Maximum clamping voltage	603 V	459 V	655 V	707 V	419 V	537 V	498 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LELF-R2
Maximum non-repetitive peak reverse power dissipation	300 W	300 W	300 W	300 W	300 W	300 W	300 W
Number of components	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Package body material	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
polarity	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL
Maximum power dissipation	0.8 W	0.8 W	0.8 W	0.8 W	0.8 W	0.8 W	0.8 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum reverse current	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA
surface mount	YES	YES	YES	YES	YES	YES	YES
technology	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE
Terminal form	WRAP AROUND	WRAP AROUND	WRAP AROUND	WRAP AROUND	WRAP AROUND	WRAP AROUND	WRAP AROUND
Terminal location	END	END	END	END	END	END	END
Maker	NXP	-	-	-	NXP	NXP	NXP
Base Number Matches	1	1	1	1	-	-	-

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