HY27SF161G2M-TCB datasheet, PDF

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HY27SF161G2M-TCB: DescriptionFlash, 64MX16, 30ns, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48; Categorystorage storage; File Size473KB，48 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/

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HY27SF161G2M-TCB Overview

Flash, 64MX16, 30ns, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48

HY27SF161G2M-TCB Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SK Hynix
Parts packaging code	TSOP1
package instruction	TSOP1, TSSOP48,.8,20
Contacts	48
Reach Compliance Code	compliant
ECCN code	3A991.B.1.A
Maximum access time	30 ns
command user interface	YES
Data polling	NO
JESD-30 code	R-PDSO-G48
JESD-609 code	e0
length	18.4 mm
memory density	1073741824 bit
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of departments/size	1K
Number of terminals	48
word count	67108864 words
character code	64000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Encapsulate equivalent code	TSSOP48,.8,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
page size	1K words
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	1.8 V
Programming voltage	1.8 V
Certification status	Not Qualified
ready/busy	YES
Maximum seat height	1.2 mm
Department size	64K
Maximum standby current	0.00005 A
Maximum slew rate	0.015 mA
Maximum supply voltage (Vsup)	1.95 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	NO
type	NAND TYPE
width	12 mm
Base Number Matches	1

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Preliminary

HY27UF(08/16)1G2M Series

HY27SF(08/16)1G2M Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

Document Title

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory

Revision History

Revision

No.

0.0

1) Initial Draft.

1) Correct Fig.10 Sequential out cycle after read

2) Add the text to Fig.1, Table.1, Table.2

- text : IO15 - IO8 (x16 only)

3) Delete ‘3.2 Page program NOTE 1.

- Note : if possible it is better to remove this constrain

4) Change the text ( page 10,13, 45)

- 2.2 Address Input : 28 Addresses -> 27 Addresses

- 3.7 Reset : Fig.29 -> Fig.30

- 5.1 Automatic page read after power up : Fig.30 -> Fig.29

5) Add 5.3 Addressing for program operation & Fig.34

1) Change TSOP, WSOP, FBGA package dimension & figures.

- Change TSOP, WSOP, FBGA package mechanical data

- Change FBGA thickness (1.2 -> 1.0 mm)

2) Correct TSOP, WSOP Pin configurations.

- 38th NC pin has been changed Lockpre(figure

3,4)

3) Edit figure 15,19 & table 4

4) Add Bad Block Management

5) Change Device Identifier 3rd Byte

- 3rd Byte ID is changed. (reserved -> don't care)

- 3rd Byte ID table is deleted.

1) Add Errata

tCLS

Specification

Relaxed value

tCLH

tWP

tALS

tALH

tDS

tWC

History

Draft Date

Aug. 2004

Remark

Preliminary

0.1

Sep. 2004

Preliminary

0.2

Oct. 2004

Preliminary

0.3

0.4

2) LOCKPRE is changed to PRE.

- Texts, Table, Figures are changed.

3) Add Note.4 (table.14)

4) Block Lock Mechanism is deleted.

- Texts, Table, figures are deleted.

5) Add Application Note(Power-On/Off Sequence & Auto Sleep mode.)

- Texts & Figures are added.

6) Edit the figures. (#10~25)

1) Change AC characteristics(tREH)

before: 20ns -> after: 30ns

2) Edit Note.1 (page. 21)

3) Edit the Application note 1,2

4) Edit The Address cycle map (x8, x16)

Nov.29 2004

Preliminary

Jan.19 2005

Preliminary

Rev 0.7 / Apr. 2005

Preliminary

HY27UF(08/16)1G2M Series

HY27SF(08/16)1G2M Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

1. SUMMARY DESCRIPTION

The HYNIX HY27(U/S)F(08/16)1G2M series is a 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V

Vcc Power Supply and in 3.3V Vcc Power Supply.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old

data is erased.

The device contains 1024 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected

Flash cells.

A program operation allows to write the 2112-byte page in typical 300us and an erase operation can be performed in

typical 2ms on a 128K-byte(X8 device) block.

Data in the page mode can be read out at 60ns

(1)

cycle time per word. The I/O pins serve as the ports for address and

data input/output as well as command input. This interface allows a reduced pin count and easy migration towards dif-

ferent densities, without any rearrangement of footprint.

Commands, Data and Addresses are synchronously introduced using CE#, WE#, ALE and CLE input pin.

The on-chip Program/Erase Controller automates all program and erase functions including pulse repetition, where

required, and internal verification and margining of data.

The modifying can be locked using the WP# input pin.

The output pin RB# (open drain buffer) signals the status of the device during each operation. In a system with mul-

tiple memories the RB# pins can be connected all together to provide a global status signal.

Even the write-intensive systems can take advantage of the HY27(U/S)F(08/16)1G2M extended reliability of 100K pro-

gram/erase cycles by providing ECC (Error Correcting Code) with real time mapping-out algorithm.

Optionally the chip could be offered with the CE# don’t care function. This option allows the direct download of the

code from the NAND Flash memory device by a microcontroller, since the CE# transitions do not stop the read opera-

tion.

The copy back function allows the optimization of defective blocks management: when a page program operation fails

the data can be directly programmed in another page inside the same array section without the time consuming serial

data insertion phase.

The cache program feature allows the data insertion in the cache register while the data register is copied into the

flash array. This pipelined program operation improves the program throughput when long files are written inside the

memory.

A cache read feature is also implemented. This feature allows to dramatically improve the read throughput when con-

secutive pages have to be streamed out.

This device includes also extra features like OTP/Unique ID area, Automatic Read at Power Up, Read ID2 extension.

The HYNIX HY27(U/S)F(08/16)1G2M series is available in 48 - TSOP1 12 x 20 mm , 48 - WSOP1 12 x 17 mm,

FBGA 9.5 x 12 mm.

1.1 Product List

PART NUMBER

HY27SF081G2M

HY27SF161G2M

HY27UF081G2M

HY27UF161G2M

ORIZATION

x16

VCC RANGE

1.70 - 1.95 Volt

63FBGA / 48TSOP1 / 48WSOP1

2.7V - 3.6 Volt

PACKAGE

NOTE:

1. This parameters is applied to the errata.

Rev 0.7 / Apr. 2005

HY27SF161G2M-TCB Related Products

	HY27SF161G2M-TCB	HY27SF161G2M-TPEP	HY27SF161G2M-TPEB	HY27SF161G2M-TPIS	HY27SF161G2M-TPES	HY27SF161G2M-TPIB	HY27SF161G2M-TPCS	HY27SF161G2M-TPCB	HY27SF161G2M-TPCP
Description	Flash, 64MX16, 30ns, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48	Flash, 64MX16, 30ns, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48	Flash, 64MX16, 30ns, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48	Flash, 64MX16, 30ns, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48	Flash, 64MX16, 30ns, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48	Flash, 64MX16, 30ns, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48	Flash, 64MX16, 30ns, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48	Flash, 64MX16, 30ns, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48	Flash, 64MX16, 30ns, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48
Is it lead-free?	Contains lead	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	incompatible	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Maker	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix
Parts packaging code	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1
package instruction	TSOP1, TSSOP48,.8,20	TSOP1, TSSOP48,.8,20	TSOP1, TSSOP48,.8,20	TSOP1, TSSOP48,.8,20	TSOP1, TSSOP48,.8,20	TSOP1, TSSOP48,.8,20	TSOP1, TSSOP48,.8,20	TSOP1, TSSOP48,.8,20	TSOP1, TSSOP48,.8,20
Contacts	48	48	48	48	48	48	48	48	48
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A
Maximum access time	30 ns	30 ns	30 ns	30 ns	30 ns	30 ns	30 ns	30 ns	30 ns
command user interface	YES	YES	YES	YES	YES	YES	YES	YES	YES
Data polling	NO	NO	NO	NO	NO	NO	NO	NO	NO
JESD-30 code	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48
JESD-609 code	e0	e6	e6	e6	e6	e6	e6	e6	e6
length	18.4 mm	18.4 mm	18.4 mm	18.4 mm	18.4 mm	18.4 mm	18.4 mm	18.4 mm	18.4 mm
memory density	1073741824 bit	1073741824 bit	1073741824 bit	1073741824 bit	1073741824 bit	1073741824 bit	1073741824 bit	1073741824 bit	1073741824 bit
Memory IC Type	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH
memory width	16	16	16	16	16	16	16	16	16
Number of functions	1	1	1	1	1	1	1	1	1
Number of departments/size	1K	1K	1K	1K	1K	1K	1K	1K	1K
Number of terminals	48	48	48	48	48	48	48	48	48
word count	67108864 words	67108864 words	67108864 words	67108864 words	67108864 words	67108864 words	67108864 words	67108864 words	67108864 words
character code	64000000	64000000	64000000	64000000	64000000	64000000	64000000	64000000	64000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	85 °C	85 °C	85 °C	85 °C	85 °C	70 °C	70 °C	70 °C
Minimum operating temperature	-	-25 °C	-25 °C	-40 °C	-25 °C	-40 °C	-	-	-
organize	64MX16	64MX16	64MX16	64MX16	64MX16	64MX16	64MX16	64MX16	64MX16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1
Encapsulate equivalent code	TSSOP48,.8,20	TSSOP48,.8,20	TSSOP48,.8,20	TSSOP48,.8,20	TSSOP48,.8,20	TSSOP48,.8,20	TSSOP48,.8,20	TSSOP48,.8,20	TSSOP48,.8,20
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
page size	1K words	1K words	1K words	1K words	1K words	1K words	1K words	1K words	1K words
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	260	260	260	260	260	260	260	260
power supply	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
Programming voltage	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
ready/busy	YES	YES	YES	YES	YES	YES	YES	YES	YES
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
Department size	64K	64K	64K	64K	64K	64K	64K	64K	64K
Maximum standby current	0.00005 A	0.00005 A	0.00005 A	0.00005 A	0.00005 A	0.00005 A	0.00005 A	0.00005 A	0.00005 A
Maximum slew rate	0.015 mA	0.015 mA	0.015 mA	0.015 mA	0.015 mA	0.015 mA	0.015 mA	0.015 mA	0.015 mA
Maximum supply voltage (Vsup)	1.95 V	1.95 V	1.95 V	1.95 V	1.95 V	1.95 V	1.95 V	1.95 V	1.95 V
Minimum supply voltage (Vsup)	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V
Nominal supply voltage (Vsup)	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	OTHER	OTHER	INDUSTRIAL	OTHER	INDUSTRIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	TIN BISMUTH	TIN BISMUTH	TIN BISMUTH	TIN BISMUTH	TIN BISMUTH	TIN BISMUTH	TIN BISMUTH	TIN BISMUTH
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	20	20	20	20	20	20	20	20
switch bit	NO	NO	NO	NO	NO	NO	NO	NO	NO
type	NAND TYPE	NAND TYPE	NAND TYPE	NAND TYPE	NAND TYPE	NAND TYPE	NAND TYPE	NAND TYPE	NAND TYPE
width	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm
Base Number Matches	1	1	1	1	1	1	1	1	1

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