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BU180

Description
Silicon NPN Darlington Power Transistor
File Size204KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
Download Datasheet View All

BU180 Overview

Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
BU180
DESCRIPTION
·Collector
Current -I
C
=
10A
·DC
Current Gain-
: h
FE
= 200(Min)@ I
C
= 5A
·Low
Collector Saturation Voltage
APPLICATIONS
·Designed
for line operated switchmode applications
such as:
·Switching
regulators
·Inverters
·Solenoid
and relay drivers
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
w
.cn
i
em
cs
.is
w
w
VALUE
UNIT
320
V
200
V
8
V
10
A
50
W
150
V
EBO
Emitter-Base Voltage
I
C
Collector Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
P
C
T
J
T
stg
Storage Temperature Range
-55~150
isc Website:www.iscsemi.cn
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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