EN29F002AB-45TIP datasheet, PDF

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EN29F002AB-45TIP: DescriptionFlash, 256KX8, 45ns, PDSO32; Categorystorage storage; File Size426KB，35 Pages; ManufacturerEon; Websitehttp://www.essi.com.tw/; Environmental Compliance

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EN29F002AB-45TIP Overview

Flash, 256KX8, 45ns, PDSO32

EN29F002AB-45TIP Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Eon
package instruction	TSSOP, TSSOP32,.8,20
Reach Compliance Code	unknown
Maximum access time	45 ns
startup block	BOTTOM
command user interface	YES
Data polling	YES
Durability	100000 Write/Erase Cycles
JESD-30 code	R-PDSO-G32
memory density	2097152 bit
Memory IC Type	FLASH
memory width	8
Number of departments/size	1,2,1,3
Number of terminals	32
word count	262144 words
character code	256000
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	256KX8
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Encapsulate equivalent code	TSSOP32,.8,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Department size	16K,8K,32K,64K
Maximum standby current	0.000005 A
Maximum slew rate	0.03 mA
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
switch bit	YES
type	NOR TYPE
Base Number Matches	1

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EN29F002A / EN29F002AN

2 Megabit (256K x 8-bit) Flash Memory

FEATURES

•

5.0V ± 10% for both read/write operation

•

Read Access Time

- 45ns, 55ns, 70ns, and 90ns

•

Fast Read Access Time

- 70ns with C

load

= 100pF

- 45ns, 55ns with C

load

= 30pF

•

Sector Architecture:

One 16K byte Boot Sector, Two 8K byte

Parameter Sectors, one 32K byte and

three 64K byte main Sectors

•

Boot Block Top/Bottom Programming

Architecture

•

High performance program/erase speed

Byte program time: 10µs typical

Sector erase time: 500ms typical

Chip erase time: 3.5s typical

•

JEDEC standard

DATA

polling and toggle

bits feature

•

Hardware

RESET

(n/a on EN29F002AN)

•

Single Sector and Chip Erase

•

Sector Protection / Temporary Sector

Unprotect (

RESET

= V

)

•

Sector Unprotect Mode

•

Embedded Erase and Program Algorithms

•

Erase Suspend / Resume modes:

Read and program another sector during

Erase Suspend Mode

•

0.23 µm triple-metal double-poly

triple-well CMOS Flash Technology

•

Low Vcc write inhibit < 3.2V

•

100K endurance cycle

•

Package Options

- 32-pin PDIP

- 32-pin PLCC

- 32-pin TSOP (Type 1)

•

Commercial and Industrial Temperature

Ranges

•

Low Standby Current

- 1µA CMOS standby current-typical

- 1mA TTL standby current

•

Low Power Active Current

- 30mA active read current

- 30mA program / erase current

•

JEDEC Standard program and erase

commands

GENERAL DESCRIPTION

The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory.

Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with

top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byte Parameter sectors, and four main

sectors (one 32K Byte and three 64K Byte). Any byte can be programmed typically at 10µs. The EN29F002A /

EN29F002AN features 5.0V voltage read and write operation. The access times are as fast as 45ns to

eliminate the need for WAIT states in high-performance microprocessor systems.

The EN29F002A / EN29F002AN has separate Output Enable (

), Chip Enable (

), and Write

Enable (

W E

) controls which eliminate bus contention issues. This device is designed to allow

either single sector or full chip erase operation, where each sector can be individually protected

against program/erase operations or temporarily unprotected to erase or program. The device can

sustain

minimum

100K

program/erase

cycles

each

sector.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

Rev. A, Issue Date: 2003/03/26

EN29F002AB-45TIP Related Products

	EN29F002AB-45TIP	EN29F002AB-45PIP	EN29F002AB-45TC	EN29F002AB-45TCP	EN29F002AB-45TI	EN29F002AB-55JC	EN29F002AB-55JCP
Description	Flash, 256KX8, 45ns, PDSO32	Flash, 256KX8, 45ns, PDIP32	Flash, 256KX8, 45ns, PDSO32	Flash, 256KX8, 45ns, PDSO32	Flash, 256KX8, 45ns, PDSO32	Flash, 256KX8, 55ns, PQCC32	Flash, 256KX8, 55ns, PQCC32
Is it Rohs certified?	conform to	conform to	incompatible	conform to	incompatible	incompatible	conform to
Maker	Eon	Eon	Eon	Eon	Eon	Eon	Eon
package instruction	TSSOP, TSSOP32,.8,20	DIP, DIP32,.6	TSSOP, TSSOP32,.8,20	TSSOP, TSSOP32,.8,20	TSSOP, TSSOP32,.8,20	QCCJ, LDCC32,.5X.6	QCCJ, LDCC32,.5X.6
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Maximum access time	45 ns	45 ns	45 ns	45 ns	45 ns	55 ns	55 ns
startup block	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
command user interface	YES	YES	YES	YES	YES	YES	YES
Data polling	YES	YES	YES	YES	YES	YES	YES
Durability	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles
JESD-30 code	R-PDSO-G32	R-PDIP-T32	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32	R-PQCC-J32	R-PQCC-J32
memory density	2097152 bit	2097152 bit	2097152 bit	2097152 bit	2097152 bit	2097152 bit	2097152 bit
Memory IC Type	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH
memory width	8	8	8	8	8	8	8
Number of departments/size	1,2,1,3	1,2,1,3	1,2,1,3	1,2,1,3	1,2,1,3	1,2,1,3	1,2,1,3
Number of terminals	32	32	32	32	32	32	32
word count	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words
character code	256000	256000	256000	256000	256000	256000	256000
Maximum operating temperature	85 °C	85 °C	70 °C	70 °C	85 °C	70 °C	70 °C
organize	256KX8	256KX8	256KX8	256KX8	256KX8	256KX8	256KX8
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSSOP	DIP	TSSOP	TSSOP	TSSOP	QCCJ	QCCJ
Encapsulate equivalent code	TSSOP32,.8,20	DIP32,.6	TSSOP32,.8,20	TSSOP32,.8,20	TSSOP32,.8,20	LDCC32,.5X.6	LDCC32,.5X.6
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	IN-LINE	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	CHIP CARRIER	CHIP CARRIER
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
power supply	5 V	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Department size	16K,8K,32K,64K	16K,8K,32K,64K	16K,8K,32K,64K	16K,8K,32K,64K	16K,8K,32K,64K	16K,8K,32K,64K	16K,8K,32K,64K
Maximum standby current	0.000005 A	0.000005 A	0.000005 A	0.000005 A	0.000005 A	0.000005 A	0.000005 A
Maximum slew rate	0.03 mA	0.03 mA	0.03 mA	0.03 mA	0.03 mA	0.03 mA	0.03 mA
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	YES	NO	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL
Terminal form	GULL WING	THROUGH-HOLE	GULL WING	GULL WING	GULL WING	J BEND	J BEND
Terminal pitch	0.5 mm	2.54 mm	0.5 mm	0.5 mm	0.5 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	QUAD	QUAD
switch bit	YES	YES	YES	YES	YES	YES	YES
type	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE
Base Number Matches	1	1	1	1	1	1	1

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