Composite Transistors
NP043A4
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
For digital circuits
0.12
-0.02
+0.03
Unit: mm
Features
Two elements incorporated into one package (Each transistor is separated)
SSSMini type package, reduction of the mounting area and assembly cost
Maximum package height (0.4 mm) contributes to develop thinner equipments
6
5
4
0.80
±0.05
1.00
±0.04
0 to 0.02
1
2
1.00
±0.05
3
0.10
(0.35) (0.35)
Basic Part Number
UNR32A4
+
UNR31A4
Display at No.1 lead
0.10
R2
47 kΩ
R1
10 kΩ
Absolute Maximum Ratings
T
a
=
25
°C
Parameter
Collector-base voltage
(Emitter open)
Tr1
Collector-emitter voltage
(Base open)
Collector current
Collector-base voltage
(Emitter open)
Tr2
Collector-emitter voltage
(Base open)
Collector current
Total power dissipation
*
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
50
50
80
−50
−50
−80
125
125
–55 to +125
Unit
V
V
mA
V
V
mA
mW
°C
°C
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
0.37
-0.02
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
SSSMini6-F1 Package
Marking Symbol: CA
Internal Connection
(C1) (B2) (E2)
6
5
4
R1
10 kΩ
Tr1
R2
47 kΩ
Tr2
1
2
3
(E1) (B1) (C2)
Note) * : Measuring on substrate at
17
mm
×
10
mm
×
1
mm
(0.10)
+0.03
Publication date: June
2005
SJJ00326AED
1
NP043A4
Electrical Characteristics
T
a
=
25
°C±3°C
Tr1
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
*
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
2.
*: Pulse measurement
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
OH
V
OL
R
1
R
1
/ R
2
f
T
Conditions
I
C
=
10
µA,
I
E
=
0
I
C
=
2
mA, I
B
=
0
V
CB
=
50
V, I
E
=
0
V
CE
=
50
V, I
B
=
0
V
EB
=
6
V, I
C
=
0
V
CE
=
10
V, I
C
=
5
mA
I
C
=
10
mA, I
B
=
0.3
mA
V
CC
=
5
V, V
B
=
0.5
V, R
L
=
1
k
Ω
kΩ
V
CC
=
5
V, V
B
=
2.5
V, R
L
=
1
k
Ω
kΩ
Min
50
50
Typ
Max
Unit
V
V
0.1
0.5
0.2
80
0.25
4.9
0.2
−30%
0.17
10
0.21
150
+30%
0.25
µA
µA
mA
V
V
V
k
kΩ
MHz
V
CB
=
10
V, I
E
=
−2
mA, f =
200
MHz
Note)
1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C
7030
measuring methods for transistors.
Tr2
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
OH
V
OL
R
1
R
1
/ R
2
f
T
V
CB
=
−10
V, I
E
=
1
mA, f =
200
MHz
Conditions
I
C
=
−10 µA,
I
E
=
0
I
C
=
−2
mA, I
B
=
0
V
CB
=
−50
V, I
E
=
0
V
CE
=
−50
V, I
B
=
0
V
EB
=
−6
V, I
C
=
0
V
CE
=
−10
V, I
C
=
−5
mA
I
C
=
−10
mA, I
B
=
−
0.3
mA
V
CC
=
−5
V, V
B
=
−
0.5
V, R
L
=
1
k
Ω
5
kΩ
V
CC
=
−5
V, V
B
=
−2.5
V, R
L
=
1
k
Ω
5
2.5
kΩ
−30%
0.17
10
0.21
80
−4.9
−
0.2
+30%
0.25
80
−
0.25
Min
−50
−50
−
0.1
−
0.5
−
0.2
Typ
Max
Unit
V
V
µA
µA
mA
V
V
V
k
kΩ
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C
7030
measuring methods for transistors.
2
SJJ00326AED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd. Industrial Co., Ltd.
京公网安备 11010802033920号
EEWORLD
