WS512K32V-XXX
512Kx32 SRAM 3.3V MULTICHIP PACKAGE
FEATURES
Access Times of 15, 17, 20ns
Low Voltage Operation
Packaging
• 66-pin, PGA Type, 1.075 inch square, Hermetic Ceramic
HIP (Package 400)
• 8 lead, 22.4mm (0.880 inch) CQFP, (G2U), 3.56mm
(0.140"), (Package 510)
Organized as 512Kx32; User Configurable as 2x512Kx16
or 4x512Kx8
Commercial, Industrial and Military Temperature Ranges
Low Voltage Operation:
• 3.3V ± 10% Power Supply
Low Power CMOS
* This product is subject to change without notice.
TTL Compatible Inputs and Outputs
Fully Static Operation:
• No clock or refresh required.
Three State Output.
Built-in Decoupling Caps and Multiple Ground Pins for Low
Noise Operation
Weight
• WS512K32V-XG2UX - 8 grams typical
WS512K32NV-XH1X - 13 grams typical
PIN CONFIGURATION FOR WS512K32NV-XH1X
Top View
1
I/O
8
I/O
9
I/O
10
A
13
A
14
A
15
A
16
A
17
I/O
0
I/O
1
I/O
2
11
22
12
WE
2
#
CS
2
#
GND
I/O
11
A
10
A
11
A
12
V
CC
CS
1
#
NC
I/O
3
33
23
I/O
15
I/O
14
I/O
13
I/O
12
OE#
A
18
WE
1
#
I/O
7
I/O
6
I/O
5
I/O
4
I/O
24
I/O
25
I/O
26
A
6
A
7
NC
A
8
A
9
I/O
16
I/O
17
I/O
18
44
34
V
CC
CS
4
#
WE
4
#
I/O
27
A
3
A
4
A
5
WE
3
#
CS
3
#
GND
I/O
19
55
45
I/O
31
I/O
30
I/O
29
I/O
28
A
0
A
1
A
2
I/O
23
I/O
22
I/O
21
I/O
20
66
8
8
8
8
WE
1
# CS
1
#
Pin Description
56
I/O
0-31
A
0-18
WE
1-4
#
CS
1-4
#
OE#
V
CC
GND
NC
Data Inputs/Outputs
Address Inputs
Write Enables
Chip Selects
Output Enable
Power Supply
Ground
Not Connected
Block Diagram
WE
2
# CS
2
#
WE
3
# CS
3
#
WE
4
# CS
4
#
OE#
A
0-18
512K x 8
512K x 8
512K x 8
512K x 8
I/O
0-7
I/O
8-15
I/O
16-23
I/O
24-31
Microsemi Corporation reserves the right to change products or specifications without notice.
November 2010
Rev. 13
© 2010 Microsemi Corporation. All rights reserved.
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WS512K32V-XXX
PIN CONFIGURATION FOR WS512K32V-XG2UX
Top View
NC
A
0
A
1
A
2
A
3
A
4
A
5
CS
3
#
GND
CS
4
#
WE
1
#
A
6
A
7
A
8
A
9
A
10
V
CC
Pin Description
I/O
0-31
A
0-18
WE
1-4
#
CS
1-4
#
OE#
V
CC
GND
NC
Data Inputs/Outputs
Address Inputs
Write Enables
Chip Selects
Output Enable
Power Supply
Ground
Not Connected
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
I/O
0
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
GND
I/O
8
I/O
9
I/O
10
I/O
11
I/O
12
I/O
13
I/O
14
I/O
15
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
V
CC
A
11
A
12
A
13
A
14
A
15
A
16
CS
1
#
OE#
CS
2
#
A
17
WE
2
#
WE
3
#
WE
4
#
A
18
NC
NC
I/O
16
I/O
17
I/O
18
I/O
19
I/O
20
I/O
21
I/O
22
I/O
23
GND
I/O
24
I/O
25
I/O
26
I/O
27
I/O
28
I/O
29
I/O
30
I/O
31
Block Diagram
WE
1
# CS
1
#
WE
2
# CS
2
#
WE
3
# CS
3
#
WE
4
# CS
4
#
OE#
A
0-18
512K x 8
512K x 8
512K x 8
512K x 8
8
8
8
8
I/O
0-7
I/O
8-15
I/O
16-23
I/O
24-31
Microsemi Corporation reserves the right to change products or specifications without notice.
November 2010
Rev. 13
© 2010 Microsemi Corporation. All rights reserved.
2
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WS512K32V-XXX
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
T
A
T
STG
V
G
T
J
V
CC
Min
-55
-65
-0.5
-0.5
Max
+125
+150
4.6
150
4.6
Unit
°C
°C
V
°C
V
CS
H
L
L
L
OE
X
L
X
H
TRUTH TABLE
WE
X
H
L
H
Mode
Standby
Read
Write
Out Disable
Data I/O
High Z
Data Out
Data In
High Z
Power
Standby
Active
Active
Active
CAPACITANCE
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
IH
V
IL
Min
3.0
2.2
-0.3
Max
3.6
V
CC
+ 0.3
+0.8
Unit
V
V
V
Parameter
OE# capacitance
WE
1-4
# capacitance
HIP (PGA)
CQFP G2U
CS
1-4
# capacitance
Data# I/O capacitance
Address input capacitance
T
A
= +25°C
Symbol
C
OE
C
WE
Conditions
V
IN
= 0V, f = 1.0 MHz
V
IN
= 0V, f = 1.0 MHz
Max
50
20
20
20
20
50
Unit
pF
pF
C
CS
C
I/O
C
AD
V
IN
= 0V, f = 1.0 MHz
V
I/O
= 0V, f = 1.0 MHz
V
IN
= 0V, f = 1.0 MHz
pF
pF
pF
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS
V
CC
= 3.3V ± 0.3V, V
SS
= 0V, -55°C
≤
T
A
≤
+125°C
Parameter
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
Output Low Voltage
Output High Voltage
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V.
Contact factory for low power option.
Symbol
I
LI
I
LO
I
CC
x 32
I
SB
V
OL
V
OH
Conditions
V
IN
= GND to V
CC
CS# = V
IH
, OE# = V
IH
, V
OUT
= GND to V
CC
CS# = V
IL
, OE# = V
IH
, f = 5MHz, V
CC
= 3.6
CS# = V
IH
, OE# = V
IH
, f = 5MHz, V
CC
= 3.6
I
OL
= 4.0mA
I
OH
= -4.0mA
Min
Max
10
10
400
200
0.4
Units
μA
μA
mA
mA
V
V
2.4
Microsemi Corporation reserves the right to change products or specifications without notice.
November 2010
Rev. 13
© 2010 Microsemi Corporation. All rights reserved.
3
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WS512K32V-XXX
AC CHARACTERISTICS
V
CC
= 3.3V, GND = 0V, -55°C
≤
T
A
≤
+125°C
Parameter
Read Cycle
Read Cycle Time
Address Access Time
Output Hold from Address Change
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Output Disable to Output in High Z
1. This parameter is guaranteed by design but not tested.
-15
Symbol
t
RC
t
AA
t
OH
t
ACS
t
OE
t
CLZ
1
t
OLZ
1
t
CHZ
t
OHZ
1
1
-17
Max
15
Min
17
0
15
8
17
8
1
0
8
8
8
8
1
0
Max
17
0
Min
20
-20
Max
20
20
10
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
Min
15
0
1
0
10
10
AC CHARACTERISTICS
V
CC
= 3.3V, GND = 0V, -55°C
≤
T
A
≤
+125°C
Parameter
Write Cycle
Write Cycle Time
Chip Select to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
Address Setup Time
Address Hold Time
Output Active from End of Write
Write Enable to Output in High Z
Data Hold Time
1. This parameter is guaranteed by design but not tested.
-15
Symbol
t
WC
t
CW
t
AW
t
DW
t
WP
t
AS
t
AH
t
OW
1
t
WHZ
t
DH
1
-17
Max
Min
17
12
12
9
14
0
0
3
8
8
0
0
Max
Min
20
14
14
10
14
0
0
3
-20
Max
Units
ns
ns
ns
ns
ns
ns
ns
9
ns
ns
ns
Min
15
12
12
9
12
0
0
2
0
AC TEST CIRCUIT
AC Test Conditions
I
OL
Current Source
D.U.T.
C
eff
= 50 pf
V
Z
≈
1.5V
(Bipolar Supply)
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
Typ
V
IL
= 0, V
IH
= 2.5
5
1.5
1.5
Unit
V
ns
V
V
I
OH
Current Source
Notes:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z
0
= 75
Ω.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
Microsemi Corporation reserves the right to change products or specifications without notice.
November 2010
Rev. 13
© 2010 Microsemi Corporation. All rights reserved.
4
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WS512K32V-XXX
TIMING WAVEFORM – READ CYCLE
t
RC
ADDRESS
t
RC
ADDRESS
t
AA
CS#
t
AA
t
OH
DATA I/O
PREVIOUS DATA VALID
DATA VALID
t
ACS
t
CLZ
OE#
t
CHZ
READ CYCLE 1 (CS# = OE# = V
IL
, WE# = V
IH
)
t
OE
t
OLZ
DATA I/O
HIGH IMPEDANCE
t
OHZ
DATA VALID
READ CYCLE 2 (WE# = V
IH
)
WRITE CYCLE – WE# CONTROLLED
t
WC
ADDRESS
t
AW
CS#
t
CW
t
AH
t
AS
WE#
t
WP
t
OW
t
WHZ
t
DW
DATA VALID
t
DH
DATA I/O
WRITE CYCLE 1, WE# CONTROLLED
WRITE CYCLE – CS# CONTROLLED
t
WC
ADDRESS
t
AS
CS#
t
AW
t
CW
t
WP
t
AH
WE#
t
DW
DATA I/O
DATA VALID
t
DH
WRITE CYCLE 2, CS# CONTROLLED
Microsemi Corporation reserves the right to change products or specifications without notice.
November 2010
Rev. 13
© 2010 Microsemi Corporation. All rights reserved.
5
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
京公网安备 11010802033920号
EEWORLD
