IXTM24N45 datasheet, PDF - EEWORLD Datasheet

IXTM24N45: DescriptionPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,; CategoryDiscrete semiconductor The transistor; File Size700KB，8 Pages; ManufacturerIXYS

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IXTM24N45 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	IXYS
package instruction	,
Reach Compliance Code	not_compliant
Configuration	Single
Maximum drain current (Abs) (ID)	24 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	300 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Base Number Matches	1

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