CHENMKO ENTERPRISE CO.,LTD
CHM6426XPT
SURFACE MOUNT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 60 Volts
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
CURRENT 3 Ampere
FEATURE
* Small package. (SC-62/SOT-89 )
* High density cell design for extremely low R
DS(ON)
.
* Rugged and reliable.
4.6MAX.
1.7MAX.
SC-62/SOT-89
1.6MAX.
0.4+0.05
2.5+0.1
+0.08
0.45-0.05
+0.08
0.40-0.05
1.50+0.1
+0.08
0.40-0.05
1.50+0.1
CONSTRUCTION
* N-Channel Enhancement
1
1 Gate
2
3
CIRCUIT
(1)
G
D
(3)
2 Drain
3 Source
0.8MIN.
4.6MAX.
S
(2)
Dimensions in millimeters
SC-62/SOT-89
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
CHM6426XPT
Units
V
DSS
V
GSS
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current - Continuous
60
V
V
±
20
3
I
D
- Pulsed
P
D
T
J
T
STG
Maximum Power Dissipation
Operating Temperature Range
Storage Temperature Range
(Note 3)
A
12
1300
-55 to 150
-55 to 150
mW
°C
°C
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
ELECTRICAL CHARACTERISTIC ( CHM6426XPT )
Electrical Characteristics
T
Symbol
Parameter
A
= 25°C unless otherwise noted
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Body Leakage
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 60 V, V
GS
= 0 V
V
GS
= 20V,V
DS
= 0 V
V
GS
= -20V, V
DS
= 0 V
60
1
+100
-100
V
µA
nA
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 µA
V
GS
=10V, I
D
=3A
1
75
88
3
90
V
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=2.4A
110
m
Ω
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1.0 MHz
665
75
40
pF
SWITCHING CHARACTERISTICS
(Note 4)
Q
g
Q
gs
Q
gd
t
on
t
r
t
off
t
f
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Rise Time
Turn-Off Time
Fall Time
V
DS
=30V, I
D
=3A
V
GS
=10V
V
DD
= 30V
I
D
= 1.0A , V
GS
= 10 V
R
GEN
= 6
Ω
13.4
1.7
2.8
13
4
33
3
17.8
nC
26
8
66
6
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Drain-Source Diode Forward Current
(Note 1)
(Note 2)
3.0
1.1
A
V
Drain-Source Diode Forward Voltage I
S
= 3A , V
GS
= 0 V
RATING CHARACTERISTIC CURVES ( CHM6426XPT )
Typical Electrical Characteristics
Figure 1. Output Characteristics
20
8
Figure 2. Transfer Characteristics
V
G S =1 0 , 9 , 8 V
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
15
6
10
4
V
G S =4 . 0 V
5
2
J
T
=125°C
T
J
=-55°C
T
J
=25°C
V
G S =3 . 0 V
0
0
1.0
3.0
4.0
2.0
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
5.0
0
0
1.0
2.0
3.0
4.0
5.0
6.0
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
Figure 3. Gate Charge
10
V
DS
=30V
I
D
=3A
2.2
Figure 4. On-Resistance Variation with
Temperature
V
GS
=10V
I
D
=3A
1.9
V
GS
, GATE TO SOURCE VOLTAGE (V)
8
DRAIN-SOURCE ON-RESISTANCE
R
DS(on)
, NO
RMALIZED
1.6
6
1.3
4
1.0
2
0.7
0
0
3
6
9
Q
g
, TOTAL GATE CHARGE (nC)
12
15
0.4
-100
-50
0
50
100
T
J
, JUNCTION T EMPERATURE (°C)
150
200
Figure 5. Gate Threshold Variation with
Temperature
1.3
1.2
V
DS
=V
GS
I
D
=250uA
V
th
, NORMALIZED GATE-SOURCE
THRESHOLD VOLTAGE
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION T EMPERATURE (°C)
125
150
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