NE3508M04-T2-A datasheet, PDF - EEWORLD Datasheet

NE3508M04-T2-A: DescriptionRF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Hetero-junction FET, LEAD FREE, SUPER MINIMOLD, M04, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size72KB，10 Pages; ManufacturerNEC Electronics; Environmental Compliance

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RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Hetero-junction FET, LEAD FREE, SUPER MINIMOLD, M04, 4 PIN

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	SMALL OUTLINE, R-PDSO-F4
Contacts	4
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOW NOISE
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	3 V
Maximum drain current (ID)	0.03 A
FET technology	HETERO-JUNCTION
highest frequency band	S BAND
JESD-30 code	R-PDSO-F4
JESD-609 code	e6
Number of components	1
Number of terminals	4
Operating mode	DEPLETION MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Minimum power gain (Gp)	12 dB
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN BISMUTH
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

	NE3508M04-T2-A	NE3508M04-A
Description	RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Hetero-junction FET, LEAD FREE, SUPER MINIMOLD, M04, 4 PIN	RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Hetero-junction FET, LEAD FREE, SUPER MINIMOLD, M04, 4 PIN
Is it Rohs certified?	conform to	conform to
package instruction	SMALL OUTLINE, R-PDSO-F4	LEAD FREE, SUPER MINIMOLD, M04, 4 PIN
Reach Compliance Code	compliant	compliant
Other features	LOW NOISE	LOW NOISE
Shell connection	DRAIN	DRAIN
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	3 V	3 V
Maximum drain current (ID)	0.03 A	0.03 A
FET technology	HETERO-JUNCTION	HETERO-JUNCTION
highest frequency band	S BAND	S BAND
JESD-30 code	R-PDSO-F4	R-PDSO-F4
JESD-609 code	e6	e6
Number of components	1	1
Number of terminals	4	4
Operating mode	DEPLETION MODE	DEPLETION MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	260
Polarity/channel type	N-CHANNEL	N-CHANNEL
Minimum power gain (Gp)	12 dB	12 dB
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	TIN BISMUTH	TIN BISMUTH
Terminal form	FLAT	FLAT
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	10
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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