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2SA1360

Description
0.05 A, 150 V, PNP, Si, POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size112KB,3 Pages
ManufacturerJinmei
Websitehttp://www.jmnic.com/
Download Datasheet Parametric Compare View All

2SA1360 Overview

0.05 A, 150 V, PNP, Si, POWER TRANSISTOR

2SA1360 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityPNP
Maximum collector current0.0500 A
Maximum Collector-Emitter Voltage150 V
Processing package descriptionROHS COMPLIANT, 2-8H1A, 3 PIN
stateEOL/LIFEBUY
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingNOT SPECIFIED
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structuresingle
Number of components1
transistor applicationsamplifier
Transistor component materialssilicon
Maximum ambient power consumption1.2 W
Transistor typeuniversal power supply
Minimum DC amplification factor80
Rated crossover frequency200 MHz
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1490
DESCRIPTION
·With TO-3PL package
·Complement to type 2SD2250
·High DC current gain
·Low collector saturation voltage
·DARLINGTON
APPLICATIONS
·For power amplification
·Optimum for HiFi output applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PL) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
C
=25
P
C
Collector power dissipation
T
a
=25
T
j
T
stg
Junction temperature
Storage temperature
3.5
150
-55~150
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-160
-140
-5
-7
-12
90
W
UNIT
V
V
V
A
A

2SA1360 Related Products

2SA1360
Description 0.05 A, 150 V, PNP, Si, POWER TRANSISTOR
Number of terminals 3
Transistor polarity PNP
Maximum collector current 0.0500 A
Maximum Collector-Emitter Voltage 150 V
Processing package description ROHS COMPLIANT, 2-8H1A, 3 PIN
state EOL/LIFEBUY
packaging shape Rectangle
Package Size Flange mounting
Terminal form THROUGH-hole
terminal coating NOT SPECIFIED
Terminal location single
Packaging Materials Plastic/Epoxy
structure single
Number of components 1
transistor applications amplifier
Transistor component materials silicon
Maximum ambient power consumption 1.2 W
Transistor type universal power supply
Minimum DC amplification factor 80
Rated crossover frequency 200 MHz

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