Melexis Inc. reserves the right to make changes without further notice to any products herein to improve reliability, function o r design. Melexis does
not assume any liability arising from the use of any product or application of any product or circuit described herein.
US5781 CMOS High Sensitivity Switch
3901005781 Rev 1.7
7/23/01
Page 2
US5781
CMOS High Sensitivity Switch
Preliminary Datasheet
Performance Graphs
Typical Magnetic Switch Points
versus
Supply Voltage
14.0
Typical Magnetic Switch Points
versus Temperature
5781
14
5781
Flux Density (mT)
12.0
12
B
OP
Flux Density (mT)
B
OP
10.0
9
B
RP
8.0
6
B
H
y
S
B
RP
6.0
3
4.0
0
5
10
15
20
25
30
0
-40
0
40
80
120
150
Supply Voltage (V)
Temperature (ºC)
Min/Max Magnetic Switch
Range Versus Temperature
16
14
Output Voltage
versus
Flux Density
30
5781
B
OP Max
5781
V
DD
24
Flux Density mV/mT
12
10
B
RP Max
Output Voltage (V)
18
B
OP
8
6
4
B
OP Min
12
B
RP
6
2
0
-40 -20
0
20
40
60
B
RP Min
V
out
0
80 100 120 140
-20
-10
0
10
20
30
40
Temperature C°
Flux Density (mT)
US5781 CMOS High Sensitivity Switch
3901005781 Rev 1.7
7/23/01
Page 3
US5781
CMOS High Sensitivity Switch
Preliminary Datasheet
Performance Graphs
Typical Supply Current
versus
Supply Voltage
5
Typical Saturation Voltage
versus
Temperature
V
DD
= 12 V, I
OUT
= 20mA
5781
500
5781
4
T
A
=
-40
o
C
400
V
DS(ON)
Supply Current (mA)
3
T
A
=
25
o
C
V
DS(ON)
(mV)
20
25
30
300
2
T
A
=
125
o
C
200
1
100
0
0
5
10
15
0
-40
0
40
80
120
160
200
Supply Voltage (V)
Temperature (
o
C)
Power Dissipation
versus
Temperature
500
Wave Soldering Parameters
All Devices
All Devices
280
Package Power Dissipation (mW)
400
260
300
Solder Temperature (
o
C)
200
UA Package
R
θ
JA
=206
o
C/W
240
200
220
100
SO Package
R
θJA
=575
o
C/W
0
-40
0
40
80
120
160
200
0
5
10
15
20
25
30
Temperature
(
o
C)
Time in Wave Solder (Seconds)
US5781 CMOS High Sensitivity Switch
3901005781 Rev 1.7
7/23/01
Page 4
US5781
CMOS High Sensitivity Switch
Preliminary Datasheet
Unique Features
CMOS Hall IC Technology
The chopper stabilized amplifier uses switched
capacitor techniques to eliminate the amplifier off-
set voltage, which, in bipolar devices, is a major
source of temperature sensitive drift. CMOS
makes this advanced technique possible. The
CMOS chip is also much smaller than a bipolar
chip, allowing very sophisticated circuitry to be
placed in less space. The small chip size also
contributes to lower physical stress and less
power consumption.
Automotive and Severe
Environment Protection
Circuit
R
1
100Ω
V
DD
D1
Z1
C1
4.7nF
R
L
1.2K
Hall IC
Installation Comments
Consider temperature coefficients of Hall IC and
magnetics, as well as air gap life time variations.
Observe temperature limits during wave solder-
ing.
Supply
Voltage
OUT
C2
4.7nF
V
SS
Applications
If reverse supply protection is desired, use a re-
sistor in series with the V
DD
pin. The resistor will
limit the supply current (Fault), I
DD
, to 50 mA. For
severe EMC conditions, use the application circuit
on this page.
Two Wire Current Biasing Circuit
I
IN
I
D D
R
L
Iout
V
DD
Absolute Maximum Ratings
Supply Voltage (Operating), V
DD
Supply Current (Fault), I
DD
Output Voltage, V
OUT
Output Current (Fault), I
OUT
Power Dissipation, P
D
Operating Temperature Range, T
A
Storage Temperature Range, T
S
Maximum Junction Temp, T
J
ESD Sensitivity (All Pins)
US5781 CMOS High Sensitivity Switch
3.5V to 24V
50mA
3.5V to 24V
50mA
100mW
-40 to 150°C
-65 to 150°C
175°C
+/- 2KV
R
b
Hall
IC
The resistors R
b
and R
L
can be used to bias the input
current, Iin. Refer to the part specification for limiting
values. This circuit will help in getting the precise ON
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