P202CH10EJ0 datasheet, PDF - EEWORLD Datasheet

P202CH10EJ0: DescriptionSilicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,1KV V(DRM),525A I(T),TO-200AB; CategoryAnalog mixed-signal IC Trigger device; File Size423KB，6 Pages; ManufacturerIXYS

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P202CH10EJ0 Overview

Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,1KV V(DRM),525A I(T),TO-200AB

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	unknown
ECCN code	EAR99
Nominal circuit commutation break time	25 µs
Critical rise rate of minimum off-state voltage	100 V/us
Maximum DC gate trigger current	200 mA
Maximum DC gate trigger voltage	3 V
Maximum holding current	600 mA
Maximum leakage current	30 mA
On-state non-repetitive peak current	3200 A
Maximum on-state current	525000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Off-state repetitive peak voltage	1000 V
surface mount	NO
Trigger device type	SCR
Base Number Matches	1

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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