CY7B197-12LMB datasheet, PDF - EEWORLD Datasheet

CY7B197-12LMB: DescriptionStandard SRAM, 256KX1, 12ns, BICMOS, CDSO28, LCC-28; Categorystorage storage; File Size152KB，6 Pages; ManufacturerCypress Semiconductor

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CY7B197-12LMB Overview

Standard SRAM, 256KX1, 12ns, BICMOS, CDSO28, LCC-28

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	DLCC
package instruction	LCC-28
Contacts	28
Reach Compliance Code	compliant
ECCN code	3A001.A.2.C
Maximum access time	12 ns
Other features	AUTOMATIC POWER-DOWN
I/O type	SEPARATE
JESD-30 code	R-CDSO-N28
JESD-609 code	e0
memory density	262144 bit
Memory IC Type	STANDARD SRAM
memory width	1
Number of functions	1
Number of ports	1
Number of terminals	28
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	256KX1
Output characteristics	3-STATE
Exportable	NO
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	SON
Encapsulate equivalent code	LCC32,.45X.55
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Filter level	38535Q/M;38534H;883B
Maximum standby current	0.04 A
Minimum standby current	4.5 V
Maximum slew rate	0.13 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	BICMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL
Base Number Matches	1

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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