STH155N75F4-2 datasheet, PDF - EEWORLD Datasheet

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STH155N75F4-2: Description160A, 75V, 0.0052ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, H2PAK-3; CategoryDiscrete semiconductor The transistor; File Size507KB，12 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/; Environmental Compliance

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STH155N75F4-2 Overview

160A, 75V, 0.0052ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, H2PAK-3

STH155N75F4-2 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
package instruction	ROHS COMPLIANT, H2PAK-3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	75 V
Maximum drain current (Abs) (ID)	160 A
Maximum drain current (ID)	160 A
Maximum drain-source on-resistance	0.0052 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	300 W
Maximum pulsed drain current (IDM)	640 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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STH155N75F4-2

STP155N75F4

N-channel 75 V, 4.2 mΩ, 160 A TO-220, H

PAK

StripFET™ DeepGATE™ Power MOSFET

Preliminary data

Features

Type

STP155N75F4

STH155N75F4-2

■

DSS

75 V

DS(on)

max

5.8 mΩ

5.2 mΩ

120 A

160 A

Extremely low on-resistance R

DS(on)

100% avalanche tested

H²PAK

TO-220

Application

■

Switching applications

Description

This STripFET™ DeepGATE™ Power MOSFET

technology is among the latest improvements,

which have been especially tailored to minimize

on-state resistance, with a new gate structure,

providing superior switching performance.

Figure 1.

Internal schematic diagram

Table 1.

Device summary

Marking

155N75F4

Package

TO-220

H²PAK

Packaging

Tube

Tape and reel

Order codes

STP155N75F4

STH155N75F4-2

March 2010

Doc ID 15211 Rev 3

1/12

www.st.com

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

STH155N75F4-2 Related Products

	STH155N75F4-2	STP155N75F4
Description	160A, 75V, 0.0052ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, H2PAK-3	120A, 75V, 0.0058ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
package instruction	ROHS COMPLIANT, H2PAK-3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	75 V	75 V
Maximum drain current (Abs) (ID)	160 A	120 A
Maximum drain current (ID)	160 A	120 A
Maximum drain-source on-resistance	0.0052 Ω	0.0058 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSFM-T3
Number of components	1	1
Number of terminals	2	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	300 W	300 W
Maximum pulsed drain current (IDM)	640 A	480 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	NO
Terminal form	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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