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S0700KC17N

Description
Silicon Controlled Rectifier, 870 A, 1700 V, SYMMETRICAL GTO SCR
CategoryAnalog mixed-signal IC    Trigger device   
File Size181KB,15 Pages
ManufacturerIXYS
Download Datasheet Parametric View All

S0700KC17N Overview

Silicon Controlled Rectifier, 870 A, 1700 V, SYMMETRICAL GTO SCR

S0700KC17N Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionDISK BUTTON, O-CXDB-X4
Reach Compliance Codeunknown
ConfigurationSINGLE
Maximum DC gate trigger current1000 mA
JESD-30 codeO-CXDB-X4
Number of components1
Number of terminals4
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current870 A
Off-state repetitive peak voltage1700 V
Repeated peak reverse voltage595 V
surface mountYES
Terminal formUNSPECIFIED
Terminal locationUNSPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSYMMETRICAL GTO SCR
Base Number Matches1
WESTCODE
An
Date:- 30 Jun, 2004
Data Sheet Issue:- 1
IXYS
Company
Symmetrical Gate Turn-Off Thyristor
Type S0700KC17#
Absolute Maximum Ratings
MAXIMUM
LIMITS
1700
1800
100-1360
100-1360
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
UNITS
V
V
V
V
RATINGS
I
TGQ
L
s
I
T(AVM)
I
T(RMS)
I
TSM
I
TSM2
It
di/dt
cr
P
FGM
P
RGM
I
FGM
V
RGM
t
off
t
on
T
j op
T
stg
2
MAXIMUM
LIMITS
700
0.3
430
870
5
9
125×10
1000
160
5
100
18
70
20
-40 to +125
-40 to +150
3
UNITS
A
µH
A
A
kA
kA
As
A/µs
W
kW
A
V
µs
µs
°C
°C
2
Peak turn-off current, (note 2)
Snubber loop inductance, I
TM
=I
TGQ
, (note 2)
Mean on-state current, T
sink
=55°C (note 3)
Nominal RMS on-state current, 25°C (note 3)
Peak non-repetitive surge current t
p
=10ms
Peak non-repetitive surge current, (Note 4)
I t capacity for fusing t
p
=10ms
Critical rate of rise of on-state current, (note 5)
Peak forward gate power
Peak reverse gate power
Peak forward gate current
Peak reverse gate voltage (note 6).
Minimum permissible off-time, I
TM
=I
TGQ
, (note 2)
Minimum permissible on-time
Operating temperature range
Storage temperature range
2
Notes:-
1) V
GK
=-2Volts.
2) T
j
=125°C, V
D
=80%V
DM
, V
DM
<V
DRM
, di
GQ
/dt=20A/µs, I
TM
=I
TGQ
& C
S
=1.5µF.
3) Double-side cooled, single phase; 50Hz, 180° half-sinewave.
4) Half-sinewave, t
p
=2ms
5) For di/dt>1000A/µs, consult factory.
6) May exceed this value during turn-off avalanche period.
Data Sheet. Type S0700KC17# Issue 1
Page 1 of 15
July, 2004
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