K7R161882B-EC20 datasheet, PDF

K7R161882B-EC20: DescriptionStandard SRAM, 1MX18, 0.45ns, CMOS, PBGA165; Categorystorage storage; File Size458KB，20 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K7R161882B-EC20 Overview

Standard SRAM, 1MX18, 0.45ns, CMOS, PBGA165

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	BGA, BGA165,11X15,40
Reach Compliance Code	unknown
Maximum access time	0.45 ns
Maximum clock frequency (fCLK)	200 MHz
I/O type	SEPARATE
JESD-30 code	R-PBGA-B165
JESD-609 code	e3
memory density	18874368 bit
Memory IC Type	STANDARD SRAM
memory width	18
Humidity sensitivity level	1
Number of terminals	165
word count	1048576 words
character code	1000000
Operating mode	SYNCHRONOUS
organize	1MX18
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Encapsulate equivalent code	BGA165,11X15,40
Package shape	RECTANGULAR
Package form	GRID ARRAY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
power supply	1.5/1.8,1.8 V
Certification status	Not Qualified
Maximum standby current	0.26 A
Minimum standby current	1.7 V
Maximum slew rate	0.45 mA
surface mount	YES
technology	CMOS
Terminal surface	MATTE TIN
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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