8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
Parameter Name | Attribute value |
Number of terminals | 4 |
Number of components | 4 |
Maximum average input current | 8 A |
Processing package description | CASE KBU, 4 PIN |
Lead-free | Yes |
EU RoHS regulations | Yes |
state | DISCONTINUED |
packaging shape | Rectangle |
Package Size | Flange mounting |
Terminal form | Wire |
terminal coating | MATTE Tin |
Terminal location | single |
Packaging Materials | Plastic/Epoxy |
structure | Bridge, 4 ELEMENTS |
Shell connection | isolation |
Diode component materials | silicon |
Maximum power consumption limit | 6.9 W |
Diode type | bridge rectifier diode |
Phase | 1 |
Maximum repetitive peak reverse voltage | 400 V |
Maximum non-repetitive peak forward current | 300 A |
KBU8G | KBU8A | KBU8B | KBU8D | KBU8M | KBU8K | KBU8J | |
---|---|---|---|---|---|---|---|
Description | 8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE | 8 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE | 8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE | 6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE | 5.6 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE | DIODE BRIDGE 800V 8A KBU | BRIDGE RECTIFIER DIODE |