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IRKTF111-08DN

Description
Silicon Controlled Rectifier, 250A I(T)RMS, 112000mA I(T), 800V V(DRM), 800V V(RRM), 2 Element, POWER, INT-A-PAK-7
CategoryAnalog mixed-signal IC    Trigger device   
File Size291KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

IRKTF111-08DN Overview

Silicon Controlled Rectifier, 250A I(T)RMS, 112000mA I(T), 800V V(DRM), 800V V(RRM), 2 Element, POWER, INT-A-PAK-7

IRKTF111-08DN Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionFLANGE MOUNT, R-PUFM-X7
Contacts7
Reach Compliance Codeunknown
Shell connectionISOLATED
Nominal circuit commutation break time10 µs
ConfigurationSERIES CONNECTED, 2 ELEMENTS
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage3 V
Quick connection description2G-2GR
Description of screw terminalsA-K-AK
Maximum holding current600 mA
JESD-30 codeR-PUFM-X7
Maximum leakage current30 mA
Humidity sensitivity level1
On-state non-repetitive peak current3200 A
Number of components2
Number of terminals7
Maximum on-state current112000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)225
Certification statusNot Qualified
Maximum rms on-state current250 A
Maximum repetitive peak off-state leakage current30000 µA
Off-state repetitive peak voltage800 V
Repeated peak reverse voltage800 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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