Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
Parameter Name | Attribute value |
Is it lead-free? | Lead free |
Is it Rohs certified? | conform to |
Parts packaging code | TO-247AD |
package instruction | FLANGE MOUNT, R-PSFM-T3 |
Contacts | 3 |
Reach Compliance Code | compliant |
Other features | FAST |
Shell connection | COLLECTOR |
Maximum collector current (IC) | 60 A |
Collector-emitter maximum voltage | 600 V |
Configuration | SINGLE WITH BUILT-IN DIODE |
Maximum landing time (tf) | 175 ns |
Gate emitter threshold voltage maximum | 5 V |
Gate-emitter maximum voltage | 20 V |
JEDEC-95 code | TO-247AD |
JESD-30 code | R-PSFM-T3 |
Number of components | 1 |
Number of terminals | 3 |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Maximum power consumption environment | 200 W |
Maximum power dissipation(Abs) | 200 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | MOTOR CONTROL |
Transistor component materials | SILICON |
Nominal off time (toff) | 400 ns |
Nominal on time (ton) | 60 ns |
VCEsat-Max | 2.9 V |
Base Number Matches | 1 |