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IXGH32N60AU1

Description
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size49KB,2 Pages
ManufacturerIXYS
Environmental Compliance  
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IXGH32N60AU1 Overview

Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN

IXGH32N60AU1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-247AD
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompliant
Other featuresFAST
Shell connectionCOLLECTOR
Maximum collector current (IC)60 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Maximum landing time (tf)175 ns
Gate emitter threshold voltage maximum5 V
Gate-emitter maximum voltage20 V
JEDEC-95 codeTO-247AD
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power consumption environment200 W
Maximum power dissipation(Abs)200 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)400 ns
Nominal on time (ton)60 ns
VCEsat-Max2.9 V
Base Number Matches1

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