HiPerFAST
TM
IGBT
ISOPLUS247
TM
V
CES
IXGR 50N60B
IXGR 50N60BD1 I
C25
V
CE(sat)
(Electrically Isolated Back Surface)
t
fi(typ)
Preliminary data sheet
= 600 V
= 75 A
= 2.5
V
= 120
ns
(D1)
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 110°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 10
Ω
Clamped inductive load, L = 100
µH
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
75
45
200
I
CM
= 100
@ 0.8 V
CES
250
-55 ... +150
150
-55 ... +150
300
2500
5
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
V
g
ISOPLUS 247
E153432
G
C
E
Isolated Backside*
G = Gate,
E = Emitter
C = Collector
* Patent pending
Features
DCB Isolated mounting tab
Meets TO-247AD package Outline
High current handling capability
Latest generation HDMOS
TM
process
MOS Gate turn-on
- drive simplicity
Applications
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
Easy assembly
High power density
Very fast switching speeds for high
frequency applications
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
V
ISOL
Weight
Symbol
Test Conditions
50/60 Hz, RMS, t = 1minute leads-to-tab
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min. Typ. Max.
50N60B
50N60BD1
50N60B
50N60BD1
600
600
2.5
2.5
5.0
5.0
200
650
1
5
±100
2.5
V
V
V
V
µA
µA
mA
mA
nA
V
BV
CES
V
GE(th)
I
CES
I
C
I
C
I
C
I
C
= 250
µA,
V
GE
= 0 V
= 1 mA
= 250
µA,
V
CE
= V
GE
= 500
µA
V
CE
= V
CES
V
GE
= 0 V
50N60B
50N60BD1
50N60B
T
J
= 125°C
50N60BD1
I
GES
V
CE(sat)
V
CE
= 0 V, V
GE
=
±20
V
I
C
=
I
T
,
V
GE
= 15 V
© 2003 IXYS All rights reserved
DS98730B(9/03)
IXGR 50N60B
IXGR 50N60BD1
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
25
42
4100
310
340
95
110
I
C
= I
T
, V
GE
= 15 V, V
CE
= 0.5 V
CES
Inductive load, T
J
= 25°C
°
I
C
= I
T
, V
GE
= 15 V
V
CE
= 0.8 • V
CES
, R
G
= R
off
= 2.7
Ω
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 • V
CES
, higher T
J
or
increased R
G
Inductive load, T
J
= 125°C
°
I
C
= I
T
, V
GE
= 15 V
V
CE
= 0.8 • V
CES
, R
G
= R
off
= 2.7
Ω
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 • V
CES
, higher T
J
or
increased R
G
30
35
50
50
200
85
2.5
50
60
3
200
175
2.5
0.5
0.15
150
S
pF
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
K/W
K/W
Dim.
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
Q
R
Millimeter
Min.
Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
ISOPLUS 247 OUTLINE
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
I
C
= I
T
; V
CE
= 10 V,
Pulse test, t
≤
300
µs,
duty cycle
≤
2 %
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
50N60B
50N60BD1
Reverse Diode (FRED)
Symbol
V
F
I
RM
t
rr
R
thJC
Note: Test current I
T
= 50A
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
1.6
2.5
V
V
A
ns
ns
0.85 K/W
I
F
= I
T
, V
GE
= 0 V,
T
J
= 150°C
Pulse test, t
≤
300 ms, duty cycle
≤
2 %
I
F
= I
T
, V
GE
= 0 V, -di
F
/dt = 100 A/ms,T
J
= 100°C 3.2
V
R
= 100 V
I
F
= 1 A; -di/dt = 200 A/ms; V
R
= 30 V
35
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
IXGR 50N60B
IXGR 50N60BD1
100
T
J
= 25°C
V
GE
= 15V
13V
11V
9V
200
160
T
J
= 25°C
80
V
GE
= 15V
13V
11V
9V
I
C
- Amperes
60
40
20
5V
I
C
- Amperes
7V
120
80
40
5V
7V
0
0
1
2
3
4
5
0
0
2
4
6
8
10
V
CE
- Volts
V
CE
- Volts
Fig. 1. Saturation Voltage Characteristics
100
80
1.6
9V
Fig. 2. Extended Output Characteristics
V
CE (sat)
- Normalized
T
J
= 125°C V = 15V
GE
13V
11V
V
GE
= 15V
1.4
1.2
1.0
I
C
= 25A
I
C
= 50A
I
C
= 100A
I
C
- Amperes
60
40
7V
0.8
0.6
0.4
25
5V
20
0
0
1
2
3
4
5
50
75
100
125
150
V
CE
- Volts
T
J
- Degrees C
Fig. 3. Saturation Voltage Characteristics
100
V
CE
= 10V
Fig. 4. Temperature Dependence of V
CE(sat)
10000
f = 1Mhz
C
iss
80
Capacitance - pF
I
C
- Amperes
60
40
T
J
= 125°C
T
J
= 25°C
1000
100
C
oss
C
rss
20
0
10
0
2
4
6
8
10
0
5
10
15
20
25
30
35
40
V
GE
- Volts
V
CE
-Volts
Fig. 5. Saturation Voltage Characteristics
Fig. 6. Junction Capacitance Curves
© 2003 IXYS All rights reserved
IXGR 50N60B
IXGR 50N60BD1
6
T
J
= 125°C
12
E
(ON)
6
5
T
J
= 125°C
E
(ON)
I
C
= 100A
E
(OFF)
12
10
5
E
(ON)
- millijoules
R
G
= 4.7Ω
10
E
(OFF)
- milliJoules
E
(OFF)
- millijoules
4
E
(OFF)
8
6
4
2
0
100
E
(ON)
- millijoules
4
3
2
1
0
E
(ON)
E
(OFF)
E
(OFF)
E
(ON)
8
6
I
C
= 50A
3
2
1
0
0
20
40
60
80
4
2
I
C
=25A
0
10
20
30
40
50
60
0
I
C
- Amperes
R
G
- Ohms
Fig. 7. Dependence of E
ON
and E
OFF
on I
C
.
16
Fig. 8. Dependence of tfi and E
OFF
on R
G
.
600
I
C
=25A
V
CE
= 250V
12
100
I
C
- Amperes
V
GE
- Volts
8
10
T
J
= 125°C
R
G
= 6.2
Ω
dV/dt < 5V/ns
4
1
0
0.1
0
20
40
60
80
100
120
0
100
200
300
400
500
600
Q
g
- nanocoulombs
V
CE
- Volts
Fig. 9. Gate Charge
1
Fig. 10. Turn-off Safe Operating Area
Z
thJC
(K/W)
0.1
0.01
Single pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
Figure 11. IGBT Transient Thermal Resistance
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
IXGR 50N60B
IXGR 50N60BD1
160
A
140
I
F
120
100
80
60
40
20
0
0
1
V
F
2
V
0
100
A/µs 1000
-di
F
/dt
0
0
200
400
600 A/µs 1000
800
-di
F
/dt
4000
nC
T
VJ
= 100°C
V
R
= 300V
80
A
T
VJ
= 100°C
V
R
= 300V
T
VJ
= 25°C
T
VJ
=100°C
3000
Q
r
2000
I
F
=120A
I
F
= 60A
I
F
= 30A
60
I
RM
40
T
VJ
=150°C
1000
20
I
F
=120A
I
F
= 60A
I
F
= 30A
Fig. 12 Forward current I
F
versus V
F
2.0
Fig. 13 Reverse recovery charge Q
r
versus -di
F
/dt
140
ns
130
Fig. 14 Peak reverse current I
RM
versus -di
F
/dt
20
V
V
FR
15
1.6
µs
t
fr
T
VJ
= 100°C
V
R
= 300V
1.5
K
f
1.0
t
rr
120
110
I
RM
100
0.5
I
F
=120A
I
F
= 60A
I
F
= 30A
t
fr
10
V
FR
1.2
0.8
Q
r
5
90
80
0
0.4
0.0
T
VJ
= 100°C
I
F
= 60A
0
200
400
0
40
80
120 °C 160
T
VJ
0
200
400
600
-di
F
/dt
800
A/µs 1000
0.0
600 A/µs 1000
800
di
F
/dt
Fig. 15 Dynamic parameters Q
r
, I
RM
versus T
VJ
1
K/W
0.1
Z
thJC
0.01
Fig. 16 Recovery time t
rr
versus -di
F
/dt
Fig. 17 Peak forward voltage V
FR
and
t
fr
versus di
F
/dt
Constants for Z
thJC
calculation:
i
1
2
3
4
R
thi
(K/W)
0.3073
0.3533
0.0887
0.1008
t
i
(s)
0.0055
0.0092
0.0007
0.0399
0.001
0.0001
0.00001
DSEP 2x61-06A
0.0001
0.001
0.01
0.1
s
t
1
Fig. 18 Transient thermal resistance junction to case
© 2003 IXYS All rights reserved
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