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IXFR44N80P

Description
Power Field-Effect Transistor, 25A I(D), 800V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size143KB,5 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
Environmental Compliance
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IXFR44N80P Overview

Power Field-Effect Transistor, 25A I(D), 800V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN

IXFR44N80P Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codecompliant
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)3400 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage800 V
Maximum drain current (ID)25 A
Maximum drain-source on-resistance0.2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSIP-T3
JESD-609 codee1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)100 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PolarHV
TM
HiPerFET
Power MOSFET
Electrically Isolated Tab
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFR 44N80P
V
DSS
I
D25
R
DS(on)
t
rr
= 800
V
= 25
A
200 mΩ
Ω
250
ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
V
ISOL
F
C
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, di/dt
100 A/μs, V
DD
V
DSS
,
T
J
150°C, R
G
= 10
Ω
T
C
= 25°C
Maximum Ratings
800
800
±
30
±
40
25
100
25
80
3.4
10
300
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
°C
V~
N/lb
g
ISOPLUS247 (IXFR)
E153432
Isolated Tab
G = Gate
S = Source
D = Drain
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<30pF)
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Advantages
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
50/60 Hz, RMS, 1 minute
Mounting force
300
260
2500
20..120 /4.5..25
5
Symbol
Test Conditions
(T
J
= 25°C unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 800
μA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
±
30 V, V
DS
= 0 V
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= I
T
, Note 1
T
J
= 125°C
Characteristic Values
Min. Typ.
Max.
800
3.0
5.0
±
200
50
1.5
200
V
V
nA
μA
mA
Easy assembly
Space savings
High power density
DS99504E(06/06)
© 2006 IXYS All rights reserved
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