INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
2SB634
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= -100V(Min)
·High
Power Dissipation
APPLICATIONS
·Designed
for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
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VALUE
UNIT
-120
V
-120
V
-6
V
-7
A
-10
A
60
W
I
C
Collector Current-Continuous
I
CM
Collector Current-Peak
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
P
C
T
J
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SB634
MAX
UNIT
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= -5mA; I
E
= 0
I
C
= -50mA; R
BE
=
∞
-120
V
V
(BR)CEO
Collector-Emitter Breakdown Voltage
-120
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= -5mA; I
C
= 0
-6
V
V
CE
(sat)
I
CBO
Collector-Emitter Saturation Voltage
I
C
= -3A; I
B
= -0.3A
B
-1.5
V
Collector Cutoff Current
V
CB
= -80V; I
E
= 0
-0.1
mA
I
EBO
Emitter Cutoff Current
h
FE-1
DC Current Gain
h
FE-2
DC Current Gain
f
T
Current-Gain—Bandwidth Product
h
FE-1
Classifications
C
40-80
D
60-120
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V
EB
= -4V; I
C
= 0
I
C
= -1A; V
CE
= -5V
40
I
C
= -3A; V
CE
= -5V
20
I
C
= -1A; V
CE
= -5V
-0.1
mA
320
15
MHz
F
160-320
100-200
isc Website：www.iscsemi.cn
2
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