SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU505
DESCRIPTION
·With TO-220C package
·High voltage,high speed-switching
APPLICATIONS
·For horizontal deflection circuits
of color TV receivers
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(Ta=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (peak)
Base current
Base current(peak)
Total power dissipation
Max.operating junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
700
5
2.5
4
1
2
75
150
-65~150
UNIT
V
V
V
A
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-case
PARAMETER
Thermal resistance junction case
MAX
1.67
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
TYP.
BU505
SYMBOL
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=0.1 A ;I
B
=0;L=25mH
700
V
V
CEsat
Collector-emitter saturation voltage
I
C
=2A ;I
B
=0.9 A
5.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=2A ;I
B
=0.9 A
1.3
V
h
FE
DC current gain
I
C
=0.1A ;V
CE
=5V
V
CE
=1500V
;
V
BE
=0;
T
C
=125
V
EB
=5V; I
C
=0
6
30
0.15
1.0
1.0
I
CES
Collector cut-off current
mA
I
EBO
Emitter cut-off current
mA
f
T
Transition frequency
I
C
=0.1A ;V
CE
=5V
7
MHz
I
s/b
Second breakdown current
V
CE
=120V;t=200µs
2
A
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BU505
Fig.2 Outline dimensions (unindicated tolerance: 0.1mm)
3
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