MAT03BIFH datasheet, PDF - EEWORLD Datasheet

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MAT03BIFH: DescriptionTRANSISTOR 20 mA, 36 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78, BIP General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size572KB，12 Pages; ManufacturerADI; Websitehttps://www.analog.com

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MAT03BIFH Overview

TRANSISTOR 20 mA, 36 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78, BIP General Purpose Small Signal

MAT03BIFH Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.02 A
Collector-emitter maximum voltage	36 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum DC current gain (hFE)	80
JEDEC-95 code	TO-78
JESD-30 code	O-MBCY-W6
JESD-609 code	e0
Number of components	2
Number of terminals	6
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	190 MHz
VCEsat-Max	0.1 V
Base Number Matches	1

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FEATURES

Dual Matched PNP Transistor

Low Offset Voltage: 100 V Max

Low Noise: 1 nV/√Hz @ 1 kHz Max

High Gain: 100 Min

High Gain Bandwidth: 190 MHz Typ

Tight Gain Matching: 3% Max

Excellent Logarithmic Conformance: r

Low Noise, Matched

Dual PNP Transistor

MAT03

PIN CONNECTION

TO-78

(H Suffix)

0.3

typ

GENERAL DESCRIPTION

The MAT03 dual monolithic PNP transistor offers excellent

parametric matching and high frequency performance. Low

noise characteristics (1 nV/

√

max @ 1 kHz), high bandwidth

(190 MHz typical), and low offset voltage (100

µV

max), makes

the MAT03 an excellent choice for demanding preamplifier appli-

cations. Tight current gain matching (3% max mismatch) and

high current gain (100 min), over a wide range of collector cur-

rent, makes the MAT03 an excellent choice for current mirrors.

A low value of bulk resistance (typically 0.3

Ω)

also makes the

MAT03 an ideal component for applications requiring accurate

logarithmic conformance.

Each transistor is individually tested to data sheet specifications.

Device performance is guaranteed at 25°C and over the extended

industrial and military temperature ranges. To ensure the long-

term stability of the matching parameters, internal protection

diodes across the base-emitter junction clamp any reverse base-

emitter junction potential. This prevents a base-emitter breakdown

condition that can result in degradation of gain and matching

performance due to excessive breakdown current.

REV. C

Information furnished by Analog Devices is believed to be accurate and

reliable. However, no responsibility is assumed by Analog Devices for its

use, nor for any infringements of patents or other rights of third parties that

may result from its use. No license is granted by implication or otherwise

under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781/329-4700

www.analog.com

Fax: 781/326-8703

MAT03BIFH Related Products

	MAT03BIFH	MAT03-000C	MAT03AH/883C	MAT03AH/883
Description	TRANSISTOR 20 mA, 36 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78, BIP General Purpose Small Signal	TRANSISTOR 20 mA, 36 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 70 MIL X 60 MIL DIE-6, BIP General Purpose Small Signal	TRANSISTOR 20 mA, 36 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78, METAL CAN-6, BIP General Purpose Small Signal	TRANSISTOR 20 mA, 36 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78, TO-78, 6 PIN, BIP General Purpose Small Signal
Reach Compliance Code	compliant	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.02 A	0.02 A	0.02 A	0.02 A
Collector-emitter maximum voltage	36 V	36 V	36 V	36 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum DC current gain (hFE)	80	100	100	100
JESD-30 code	O-MBCY-W6	R-XUUC-N6	O-MBCY-W6	O-MBCY-W6
Number of components	2	2	2	2
Number of terminals	6	6	6	6
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	METAL	UNSPECIFIED	METAL	METAL
Package shape	ROUND	RECTANGULAR	ROUND	ROUND
Package form	CYLINDRICAL	UNCASED CHIP	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	YES	NO	NO
Terminal form	WIRE	NO LEAD	WIRE	WIRE
Terminal location	BOTTOM	UPPER	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Is it Rohs certified?	incompatible	-	incompatible	incompatible
Other features	LOW NOISE	-	LOW NOISE	LOW NOISE
JEDEC-95 code	TO-78	-	TO-78	TO-78
JESD-609 code	e0	-	e0	e0
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
Terminal surface	TIN LEAD	-	TIN LEAD	Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	-	AMPLIFIER	AMPLIFIER
Nominal transition frequency (fT)	190 MHz	-	190 MHz	190 MHz
VCEsat-Max	0.1 V	-	0.1 V	0.1 V
Parts packaging code	-	DIE	TO-78	TO-78
package instruction	-	UNCASED CHIP, R-XUUC-N6	METAL CAN-6	TO-78, 6 PIN
Contacts	-	6	6	8

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