SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2292
DESCRIPTION
·With TO-3 package
·High speed ,high voltage
APPLICATIONS
·For high speed ,high voltage switching
and DC-DC converter application
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
MAXIMUN RATINGS
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
T
mb
.25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
500
400
7
8
80
150
-65~150
UNIT
V
V
V
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
VALUE
1.25
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=10mA ; I
B
=0
I
C
=1mA ; I
E
=0
I
E
=1mA ; I
C
=0
I
C
=4A; I
B
=0.8A
I
C
=4A; I
B
=0.8A
V
CB
=500V; I
E
=0
V
EB
=7V; I
C
=0
I
C
=4A ; V
CE
=2V
15
MIN
400
500
7
2SC2292
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
TYP.
MAX
UNIT
V
V
V
0.8
1.5
0.1
0.1
V
V
mA
mA
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2292
Fig.2 Outline dimensions
3
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