Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
KSC5021
DESCRIPTION
·With
TO-220C package
·High
voltage and high reliability
·High
speed switching
·Wide
area of safe operation
·
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Collector dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
800
500
7
5
10
2
50
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
ob
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=5mA ;I
B
=0
I
C
=1mA; I
E
=0
I
E
=1mA;I
C
=0
I
C
=3A ;I
B
=0.6A
I
C
=3A ;I
B
=0.6A
V
CB
=500V ;I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.6A ; V
CE
=5V
I
C
=3A ; V
CE
=5V
I
C
=0.6A ; V
CE
=10V
I
E
=0;f=1MHz ; V
CB
=10V
15
8
18
80
MIN
500
800
7
TYP.
KSC5021
MAX
UNIT
V
V
V
1.0
1.5
10
10
50
V
V
μA
μA
MHz
pF
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=5I
B1
=-2.5I
B2
=4A
V
CC
=200V;R
L
=50Ω
0.5
3.0
0.3
μs
μs
μs
h
FE-1
Classifications
R
15-30
O
20-40
Y
30-50
2