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2SC4916

Description
Silicon NPN Power Transistors
File Size133KB,4 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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2SC4916 Overview

Silicon NPN Power Transistors

Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4916
DESCRIPTION
·With
TO-3P(H)IS package
·High
speed ;high speed
·Low
saturation voltage
·Bult-in
damper diode
APPLICATIONS
·Horizontal
deflection output for high
resolution display,colorTV
·High
speed switching applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
600
5
7
14
3.5
50
150
-55~150
UNIT
V
V
V
A
A
A
W
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