Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1576
DESCRIPTION
·With
TO-3 package
·High
voltage,high speed
APPLICATIONS
·For
high voltage ,fast switching
applications
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Fig.1 simplified outline (TO-3) and symbol
Collector
DESCRIPTION
Absolute maximum ratings(Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
T
C
≤25℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
450
330
7
8
100
200
-65~200
UNIT
V
V
V
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
VALUE
1.25
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SC1576
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=100mA ; I
B
=0
330
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=1mA ; I
C
=0
7
V
V
CEsat
Collector-emitter saturation voltage
I
C
=5A; I
B
=0.8A
1.5
V
V
BEsat
Base-emitter saturation voltage
I
C
=5A; I
B
=0.8A
1.8
V
I
CBO
Collector cut-off current
V
CB
=450V; I
E
=0
0.1
mA
I
EBO
Emitter cut-off current
V
EB
=7V; I
C
=0
0.1
mA
h
FE
DC current gain
I
C
=1A ; V
CE
=5V
30
150
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1576
Fig.2 Outline dimensions
3
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