HMC475ST89
/
475ST89E
v02.0710
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.5 GHz
Typical Applications
Features
P1dB Output Power: +22 dBm
Gain: 21.5 dB
Output IP3: +35 dBm
Cascadable 50 Ohm I/Os
Single Supply: +8V to +12V
Industry Standard SOT89 Package
8
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
The HMC475ST89 / HMC475ST89E is an ideal RF/IF
gain block & LO or PA driver:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
• IF and RF Applications
Functional Diagram
General Description
The HMC475ST89(E) is a InGaP Heterojunction
Bipolar Transistor (HBT) Gain Block MMIC SMT
amplifier covering DC to 4.5 GHz. Packaged in an
industry standard SOT89, the amplifier can be used
as a cascadable 50 Ohm RF/IF gain stage as well as
a LO or PA driver with up to +25 dBm output power.
The HMC475ST89(E) offers 21.5 dB of gain and +35
dBm output IP3 at 850 MHz while requiring only 110
mA from a single positive supply. The Darlington
topology results in reduced sensitivity to normal
process variations and excellent gain stability over
temperature while requiring a minimal number of
external bias components.
Electrical Specifi cations,
Vs= 8.0 V, Rbias= 9.1 Ohm, T
A
= +25° C
Parameter
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 4.5 GHz
DC - 4.5 GHz
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 4.5 GHz
DC - 1.0 GHz
1.0 - 4.5 GHz
DC - 4.5 GHz
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 4.5 GHz
DC - 2.5 GHz
2.5 - 4.5 GHz
DC - 3.0 GHz
3.0 - 4.5 GHz
Min.
19.5
17.5
14.5
11.5
9
Typ.
21.5
19.5
16.5
13.5
12
0.008
11
14
14
13
10
25
22.0
21.0
19.5
16.0
14.0
35
30
3.5
3.8
110
Max.
Units
dB
dB
dB
dB
dB
dB/ °C
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
mA
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
0.012
Output Power for 1 dB Compression (P1dB)
19.0
18.0
17.5
13.0
11.0
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
Noise Figure
Supply Current (Icq)
Note: Data taken with broadband bias tee on device output.
135
8 - 74
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC475ST89
/
475ST89E
v02.0710
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.5 GHz
Broadband Gain & Return Loss
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
-40
0
1
2
Gain vs. Temperature
26
24
22
20
18
16
14
12
10
8
6
4
2
0
0
1
8
+25C
+85C
-40C
RESPONSE (dB)
3
4
5
6
2
3
4
5
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
-35
0
1
2
3
4
5
FREQUENCY (GHz)
+25C
+85C
-40C
Output Return Loss vs. Temperature
0
+25C
+85C
-40C
-5
RETURN LOSS (dB)
-10
-15
-20
-25
0
1
2
3
4
5
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
REVERSE ISOLATION (dB)
Noise Figure vs. Temperature
10
+25C
+85C
-40C
NOISE FIGURE (dB)
-10
+25C
+85C
-40C
8
6
-20
4
-30
2
-40
0
1
2
3
4
5
FREQUENCY (GHz)
0
0
1
2
3
4
5
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8 - 75
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
GAIN (dB)
S21
S11
S22
HMC475ST89
/
475ST89E
v02.0710
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.5 GHz
P1dB vs. Temperature
Psat vs. Temperature
28
24
20
Psat (dBm)
16
12
8
4
0
+25C
+85C
-40C
8
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
P1dB (dBm)
28
24
20
16
12
8
4
0
0
1
2
3
4
5
FREQUENCY (GHz)
+25C
+85C
-40C
0
1
2
3
4
5
FREQUENCY (GHz)
Output IP3 vs. Temperature
45
40
35
IP3 (dBm)
30
25
20
15
0
1
2
3
4
5
FREQUENCY (GHz)
Gain, Power & OIP3 vs. Supply Voltage
for Constant Icc= 110 mA @ 850 MHz
GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
42
36
30
24
18
12
6
0
8
9
10
Vs (Vdc)
11
12
Gain
P1dB
Psat
IP3
+25C
+85C
-40C
Vcc vs. Icc Over Temperature for
Fixed Vs= 8V, R
BIAS
= 9.1 Ohms
140
135
130
125
120
115
110
105
100
95
90
85
80
75
6.9
+85C
Icc (mA)
+25C
-40C
7
7.1
7.2
Vcc (Vdc)
7.3
7.4
7.5
8 - 76
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC475ST89
/
475ST89E
v02.0710
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.5 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
RF Input Power (RFIN)(Vcc = +7.2 Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 16.86 mW/°C above 85 °C)
Thermal Resistance
(junction to lead)
Storage Temperature
Operating Temperature
+8.0 Vdc
+17 dBm
150 °C
1.09 W
59.3 °C/W
-65 to +150 °C
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
8
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
8 - 77
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL:
MOLDING COMPOUND MP-180S OR EQUIVALENT.
2. LEAD MATERIAL: Cu w/ Ag SPOT PLATING.
3. LEAD PLATING: 100% MATTE TIN.
4. DIMENSIONS ARE IN INCHES [MILLIMETERS]
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number
HMC475ST89
HMC475ST89E
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
[3]
H475
XXXX
H475
XXXX
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC475ST89
/
475ST89E
v02.0710
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.5 GHz
Pin Descriptions
8
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
Pin Number
Function
Description
Interface Schematic
1
IN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
3
OUT
RF output and DC Bias (Vcc) for the output stage.
2, 4
GND
These pins and package bottom must be connected to RF/
DC ground.
Application Circuit
Recommended Bias Resistor Values for
Icc= 110 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
R
BIAS
V
ALUE
R
BIAS
P
OWER
R
ATING
8V
9.1 Ω
¼W
9V
18 Ω
½W
10V
27 Ω
½W
12V
43 Ω
1W
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. R
BIAS
provides DC bias stability over temperature.
Recommended Component Values for Key Application Frequencies
Frequency (MHz)
Component
50
L1
C1, C2
270 nH
0.01 μF
900
56 nH
100 pF
1900
18 nH
100 pF
2200
18 nH
100 pF
2400
15 nH
100 pF
3500
8.2 nH
100 pF
4500
6.8 nH
100 pF
8 - 78
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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