DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µ
PC3226TB
5 V, SILICON GERMANIUM MMIC
MEDIUM OUTPUT POWER AMPLIFIER
DESCRIPTION
The
µ
PC3226TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF amplifier for DBS tuners.
This IC is manufactured using our 50 GHz f
max
UHS2 (Ultra High Speed Process) SiGe bipolar process.
FEATURES
• Low current
• Medium output power
• High linearity
• Power gain
• Noise Figure
• Supply voltage
• Port impedance
: I
CC
= 15.5 mA TYP. @ V
CC
= 5.0 V
: P
O (sat)
= +13.0 dBm TYP. @ f = 1.0 GHz
: P
O (sat)
= +9.0 dBm TYP. @ f = 2.2 GHz
: P
O (1dB)
= +7.5 dBm TYP. @ f = 1.0 GHz
: P
O (1dB)
= +5.7 dBm TYP. @ f = 2.2 GHz
: G
P
= 25.0 dB TYP. @ f = 1.0 GHz
: G
P
= 26.0 dB TYP. @ f = 2.2 GHz
: NF = 5.3 dB TYP. @ f = 1.0 GHz
: NF = 4.9 dB TYP. @ f = 2.2 GHz
: V
CC
= 4.5 to 5.5 V
: input/output 50
Ω
APPLICATIONS
• IF amplifiers in LNB for DBS converters etc.
ORDERING INFORMATION
Part Number
Order Number
Package
Marking
C3N
Supplying Form
Embossed tape 8 mm wide.
1, 2, 3 pins face the perforation side of the tape.
Qty 3 kpcs/reel.
µ
PC3226TB-E3
µ
PC3226TB-E3-A 6-pin super minimold
(Pb-Free)
Note
Note
With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark
To order evaluation samples, please contact your nearby sales office
Part number for sample order:
µ
PC3226TB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10558EJ01V0DS (1st edition)
Date Published May 2005 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices, Ltd. 2005
µ
PC3226TB
PIN CONNECTIONS
(Top View)
3
4 3
(Top View)
4 4
(Bottom View)
3
Pin No.
1
Pin Name
INPUT
GND
GND
OUTPUT
GND
V
CC
C3N
2
3
4
2
5 2
5 5
2
1
6 1
6 6
1
5
6
PRODUCT LINE-UP OF 5 V-BIAS SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER
(T
A
= +25°C, f = 1 GHz, V
CC
= V
out
= 5.0 V, Z
S
= Z
L
= 50
Ω)
Part No.
f
u
(GHz)
2.9
2.3
1.0
2.7
3.2
2.8
3.2
P
O (sat)
(dBm)
+10.0
+11.5
+13.5
+8.5
+12.0
+15.5
Note
G
P
(dB)
15
23
33
23
23
32.5
Note
NF
(dB)
6.5
5.0
3.5
6.0
4.5
3.7
Note
I
CC
(mA)
26
25
22
25
19
24.5
15.5
Package
6-pin super minimold
Marking
C1D
C1E
C1F
C2L
C3J
C3M
C3N
µ
PC2708TB
µ
PC2709TB
µ
PC2710TB
µ
PC2776TB
µ
PC3223TB
µ
PC3225TB
µ
PC3226TB
+13.0
25
5.3
Note
µ
PC3225TB is f = 0.95 GHz
Remark
Typical performance. Please refer to
ELECTRICAL CHARACTERISTICS
in detail.
2
Data Sheet PU10558EJ01V0DS
µ
PC3226TB
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply Voltage
Total Circuit Current
Power Dissipation
Operating Ambient Temperature
Storage Temperature
Input Power
Symbol
V
CC
I
CC
P
D
T
A
T
stg
P
in
T
A
= +25°C
T
A
= +25°C
T
A
= +25°C
T
A
= +85°C
Note
Conditions
Ratings
6.0
40
270
−40
to +85
−55
to +150
+10
Unit
V
mA
mW
°C
°C
dBm
Note
Mounted on double-sided copper-clad 50
×
50
×
1.6 mm epoxy glass PWB
RECOMMENDED OPERATING RANGE
Parameter
Supply Voltage
Operating Ambient Temperature
Symbol
V
CC
T
A
Conditions
MIN.
4.5
−40
TYP.
5.0
+25
MAX.
5.5
+85
Unit
V
°C
Data Sheet PU10558EJ01V0DS
3
µ
PC3226TB
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, V
CC
= V
out
= 5.0 V, Z
S
= Z
L
= 50
Ω)
Parameter
Circuit Current
Power Gain 1
Power Gain 2
Power Gain 3
Power Gain 4
Power Gain 5
Power Gain 6
Saturated Output Power 1
Saturated Output Power 2
Gain 1 dB Compression Output Power 1
Gain 1 dB Compression Output Power 2
Noise Figure 1
Noise Figure 2
Isolation 1
Isolation 2
Input Return Loss 1
Input Return Loss 2
Output Return Loss 1
Output Return Loss 2
Input 3rd Order Distortion Intercept Point 1
Symbol
I
CC
G
P
1
G
P
2
G
P
3
G
P
4
G
P
5
G
P
6
P
O (sat)
1
P
O (sat)
2
P
O (1 dB)
1
P
O (1 dB)
2
NF1
NF2
ISL1
ISL2
RL
in
1
RL
in
2
RL
out
1
RL
out
2
IIP
3
1
Test Conditions
No input signal
f = 0.1 GHz, P
in
=
−30
dBm
f = 1.0 GHz, P
in
=
−30
dBm
f = 1.8 GHz, P
in
=
−30
dBm
f = 2.2 GHz, P
in
=
−30
dBm
f = 2.6 GHz, P
in
=
−30
dBm
f = 3.0 GHz, P
in
=
−30
dBm
f = 1.0 GHz, P
in
=
−2
dBm
f = 2.2 GHz, P
in
=
−8
dBm
f = 1.0 GHz
f = 2.2 GHz
f = 1.0 GHz
f = 2.2 GHz
f = 1.0 GHz, P
in
=
−30
dBm
f = 2.2 GHz, P
in
=
−30
dBm
f = 1.0 GHz, P
in
=
−30
dBm
f = 2.2 GHz, P
in
=
−30
dBm
f = 1.0 GHz, P
in
=
−30
dBm
f = 2.2 GHz, P
in
=
−30
dBm
f1 = 1 000 MHz, f2 = 1 001 MHz,
P
in
=
−30
dBm
Input 3rd Order Distortion Intercept Point 2
IIP
3
2
f1 = 2 200 MHz, f2 = 2 201 MHz,
P
in
=
−30
dBm
Output 3rd Order Distortion Intercept Point 1
OIP
3
1
f1 = 1 000 MHz, f2 = 1 001 MHz,
P
in
=
−30
dBm
Output 3rd Order Distortion Intercept Point 2
OIP
3
2
f1 = 2 200 MHz, f2 = 2 201 MHz,
P
in
=
−30
dBm
2nd Order Intermodulation Distortion
IM
2
f1 = 1 000 MHz, f2 = 1 001 MHz,
P
in
=
−30
dBm
K factor 1
K factor 2
K1
K2
f = 1.0 GHz
f = 2.2 GHz
−
−
1.4
1.6
−
−
−
−
−
43.0
−
dBc
−
+15.0
−
−
+20.0
−
dBm
−
−11.0
−
MIN.
12.5
22.0
23.0
23.0
23.0
22.5
22.0
+10.0
+6.0
+5.0
+3.0
−
−
31
33
10.0
9.0
10.0
10.0
−
TYP.
15.5
24.0
25.0
26.0
26.0
25.5
25.0
+13.0
+9.0
+7.5
+5.7
5.3
4.9
34
36
14.0
13.0
13.0
13.0
−5.0
MAX.
19.5
26.0
27.5
29.0
29.0
29.0
28.5
−
−
−
−
6.0
6.0
−
−
−
−
−
−
−
dBm
dB
dB
dB
dB
dBm
dBm
Unit
mA
dB
4
Data Sheet PU10558EJ01V0DS
µ
PC3226TB
TEST CIRCUIT
V
CC
C
4
1 000 pF
1 000 pF
C
3
L
6
50
Ω
IN
C
1
100 pF
1
4
C
2
100 pF
50
Ω
OUT
100 nH
2, 3, 5
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
COMPONENTS OF TEST CIRCUIT FOR MEASURING
ELECTRICAL CHARACTERISTICS
Type
C1, C2
C3
C4
L
Chip Capacitor
Chip Capacitor
Feed-through Capacitor
Chip Inductor
Value
100 pF
1 000 pF
1 000 pF
100 nH
INDUCTOR FOR THE OUTPUT PIN
The internal output transistor of this IC, to output medium power. To supply current for output transistor, connect
an inductor between the V
CC
pin (pin 6) and output pin (pin 4). Select inductance, as the value listed above.
The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum
voltage drop to output enable high level. In terms of AC, the inductor makes output-port impedance higher to get
enough gain. In this case, large inductance and Q is suitable.
CAPACITORS FOR THE V
CC
, INPUT AND OUTPUT PINS
Capacitors of 1 000 pF are recommendable as the bypass capacitor for the V
CC
pin and the coupling capacitors for
the input and output pins.
The bypass capacitor connected to the V
CC
pin is used to minimize ground impedance of V
CC
pin. So, stable bias
can be supplied against V
CC
fluctuation.
The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial
impedance. Their capacitances are therefore selected as lower impedance against a 50
Ω
load. The capacitors thus
perform as high pass filters, suppressing low frequencies to DC.
To obtain a flat gain from 100 MHz upwards, 1 000 pF capacitors are used in the test circuit. In the case of under
10 MHz operation, increase the value of coupling capacitor such as 10 000 pF. Because the coupling capacitors are
determined by equation, C = 1/(2
πRfc).
Data Sheet PU10558EJ01V0DS
5
Discrete Device
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