SMD Type
Silicon Schottky Diode
BAT14-03W
Diodes
SOD-323
+0.1
1.7
-0.1
Unit: mm
DBS mixer application to 12GHz
+0.1
2.6
-0.1
1.0max
Medium barrier type
Low capacitance
0.475
0.375
Absolute Maximum Ratings Ta = 25
Parameter
Diode reverse voltage
Forward current
Operating temperature range
Storage temperature
Total power dissipation
Junction ambient
(1)
Symbol
V
R
I
F
T
op
T
stg
Ts
85
P
tot
R
thJA
R
thJS
Value
4
90
-55 to+125
-55 to+150
100
450
690
Unit
V
mA
mW
Junction-soldering point
Note:
1.Package mounted on an epoxy pcb 40 mm
40 mm
K/W
15 mm/1cm
2
Cu.
Electrical Characteristics T a = 25
Param eter
Breakdown Voltage
Forward voltage
I
(BR)
= 5
I
F
= 1 m A
I
F
= 10 m A
Diode capacitance
Differential forward resistance
V
R
= 0; f = 1 MHz
I
F
= 10 m A/50 m A
C
T
R
F
A
Sym bol
V
(BR)
V
F
Min
4
0.36
0.48
0.43
0.55
0.22
5.5
0.52
0.66
0.35
pF
Typ
Max
Unit
V
V
Marking
Marking
O
0.1
+0.05
-0.02
+0.1
1.3
-0.1
Features
+0.05
0.3
-0.05
+0.05
0.85
-0.05
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