TLP371,TLP372
TOSHIBA Photocoupler GaAs Ired & Photo-Transistor
TLP371, TLP372
Programmable Controllers
Telecommunication
Solid State Relay
The TOSHIBA TLP371 and TLP372 consists of a gallium arsenide infrared
emitting diode optically coupled to a Darlington connected photo-transistor
which has an integrated base-emitter resistor to optimize switching speed and
elevated temperature characteristics in a six lead plastic DIP package.
TLP372 has no-base internal connection for high-EMI environments.
•
•
•
•
•
Current transfer ratio : 1000% (min)
Isolation voltage
UL recognized
: 5000 Vrms (min)
: UL1577, file no. E67349
File No.E67349
CQC approved(TLP371): GB4943.1,GB8898 Japan Factory
Unit: mm
cUL approved(TLP371): CSA Component Acceptance Service No. 5A
TOSHIBA
11-7A8
Weight: 0.4 g (typ.)
Pin Configurations
(top view)
TLP371
1
2
3
1 : Anode
2 : Cathode
3 : NC
4 : Emitter
5 : Collector
6 : Base
6
5
4
1
2
3
1 : Anode
2 : Cathode
3 : NC
4 : Emitter
5 : Collector
6 : NC
TLP372
6
5
4
Start of commercial production
1986-03
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2017-05-09
TLP371,TLP372
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Forward current
Forward current derating (Ta ≥ 39°C)
Peak forward current (100 μs pulse, 100 pps)
LED
Reverse voltage
Diode power dissipation
Diode power dissipation derating (Ta ≥39 °C)
Junction temperature
Collector-emitter voltage
Collector-base voltage (TLP371)
Emitter-collector voltage
Detector
Emitter-base voltage (TLP371)
Collector current
Power dissipation
Power dissipation derating (Ta ≥ 25°C)
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature (10 s)
Total package power dissipation
Total package power dissipation derating (Ta ≥ 25°C)
Isolation voltage (AC, 60 s, R.H. ≤ 60%)
(Note 1)
Symbol
I
F
ΔI
F
/°C
I
FP
V
R
P
D
Rating
60
-0.7
1
5
70
-0.81
125
300
300
0.3
7
150
300
-3.0
125
-55 to 125
-55 to 100
260
350
-3.5
5000
Unit
mA
mA/°C
A
V
mW
mW/°C
°C
V
V
V
V
mA
mW
mW/°C
°C
°C
°C
°C
mW
mW/°C
Vrms
Δ
P
D
/°C
T
j
V
CEO
V
CBO
V
ECO
V
EBO
I
C
P
C
ΔP
C
/°C
T
j
T
stg
T
opr
T
sol
P
T
ΔP
T
/°C
BV
S
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc.).
Note 1: Device considered a two terminal device: Pins 1, 2 and 3 shorted together and pins 4,5 and 6 shorted
together.
Recommended Operating Conditions
Characteristic
Supply voltage
Forward current
Collector current
Operating temperature
Symbol
V
CC
I
F
I
C
T
opr
Min
―
―
―
-25
Typ.
―
16
―
―
Max
200
25
120
85
Unit
V
mA
mA
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
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2017-05-09
TLP371,TLP372
Electrical Characteristics
(Ta = 25°C)
Characteristic
Forward voltage
LED
Reverse current
Capacitance
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Collector-base breakdown voltage (TLP371)
Emitter-base breakdown voltage (TLP371)
Detector
Collector dark current
Collector dark current (TLP371)
Collector dark current (TLP371)
DC forward current gain (TLP371)
Capacitance (collector to emitter)
Symbol
V
F
I
R
C
T
V
(BR)CEO
V
(BR)ECO
V
(BR)CBO
V
(BR)EBO
I
CEO
I
CER
I
CBO
h
FE
C
CE
Test Condition
I
F
= 10 mA
V
R
= 5 V
V = 0 V, f = 1 MHz
I
C
= 0.1 mA
I
E
= 0.1 mA
I
C
= 0.1 mA
I
E
= 0.1 mA
V
CE
= 200 V
V
CE
= 200 V, Ta = 85 °C
V
CE
= 200 V, Ta = 85 °C
R
BE
= 10 MΩ
V
CB
= 200 V
V
CE
= 5 V, I
C
= 10 mA
V = 0 V, f = 1 MHz
Min
1.0
―
―
300
0.3
300
7
―
―
―
―
―
―
Typ.
1.15
―
30
―
―
―
―
10
―
0.5
0.1
7000
10
Max
1.3
10
―
―
―
―
―
200
20
10
―
―
―
Unit
V
μA
pF
V
V
V
V
nA
μA
μA
nA
―
pF
Coupled Electrical Characteristics
(Ta = 25°C)
Characteristic
Current transfer ratio
Saturated CTR
Base photo-current (TLP371)
Collector-emitter saturation voltage
Symbol
I
C
/I
F
I
C
/I
F(sat)
I
PB
V
CE (sat)
Test Condition
I
F
= 1 mA, V
CE
= 1 V
I
F
= 10 mA, V
CE
= 1 V
I
F
= 1 mA, V
CB
= 1 V
I
C
= 10 mA, I
F
= 1 mA
I
C
= 100 mA, I
F
= 10 mA
MIn
1000
500
―
―
0.3
Typ.
4000
―
6
―
―
Max
―
―
―
1.0
1.2
Unit
%
%
μA
V
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2017-05-09
TLP371,TLP372
Isolation Characteristics
(Ta = 25°C)
Characteristic
Capacitance
(input to output)
Isolation resistance
Symbol
C
S
R
S
Test Condition
V
S
= 0 V, f = 1 MHz
V
S
= 500 V, R.H. ≤ 60%
AC, 60 s
Isolation voltage
BV
S
AC, 1 s, in oil
DC, 60 s, in oil
Min
―
5×10
10
5000
―
―
Typ.
0.8
10
14
―
10000
10000
Max
―
―
―
―
―
Unit
pF
Ω
Vrms
Vdc
Switching Characteristics
(Ta = 25°C)
Characteristic
Rise time
Fall time
Turn-on time
Turn-off time
Turn-on time
Storage time
Turn-off time
Turn-on time
Storage time
Turn-off time
Symbol
t
r
t
f
t
on
t
off
t
ON
t
s
t
OFF
t
ON
t
s
t
OFF
R
L
= 180 Ω
R
BE
= OPEN
V
CC
= 10 V, I
F
= 16 mA
R
L
= 180 Ω
R
BE
= 10 MΩ(TLP371)
V
CC
= 10 V, I
F
= 16 mA
(Fig.1)
V
CC
= 10 V
I
C
= 10 mA
R
L
= 100 Ω
Test Condition
Min
―
―
―
―
―
―
―
(Fig.1)
―
―
―
Typ.
40
15
50
15
3
45
90
5
40
80
Max
―
―
―
―
―
―
―
―
―
―
μs
μs
μs
Unit
Fig.1: Switching time test circuit
I
F
V
CE
t
ON
I
F
R
BE
R
L
V
CC
V
CE
t
s
V
CC
9V
1V
t
OFF
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2017-05-09
TLP371,TLP372
I
F
– Ta
Allowable collector power
dissipation P
C
(mW)
100
400
P
C
– Ta
Allowable forward current
I
F
(mA)
80
320
60
240
40
160
20
0
-20
80
0
-20
0
20
40
60
80
100
120
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
Ambient
temperature Ta
(°C)
5000
3000
I
FP
– D
R
(mA)
Pulse width
≤ 100μs
Ta = 25°C
100
50
30
10
5
3
I
F
– V
F
Ta = 25°C
Pulse forward current
I
FP
(mA)
1000
500
300
100
50
30
10
Forward current I
F
1
0.5
0.3
10
-3
10
-2
10
-1
10
0
Duty cycle ratio DR
0.1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Forward voltage
VF
(V)
-3.2
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
-0.4
0.1
Δ
V
F/
Δ
Ta
– I
F
1000
I
FP
– V
FP
(mA)
Pulse forward current I
FP
500
300
100
50
30
10
5
3
1
0.6
Pulse width ≤ 10μs
Repetitive
=100Hz
Ta = 25°C
1.0
1.4
1.8
2.2
2.6
3.0
frequency
Forward voltage temperature
coefficient ΔV
F/
ΔTa (mV/°C)
0.3 0.5
1
3
10
30
50
Forward current I
F
(mA)
Pulse forward voltage VFP (V)
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2017-05-09
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