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MASMLJ16CAE3TR

Description
3000W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size175KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance  
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MASMLJ16CAE3TR Overview

3000W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, PLASTIC PACKAGE-2

MASMLJ16CAE3TR Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeDO-214AB
package instructionR-PDSO-C2
Contacts2
Reach Compliance Codeunknown
Other featuresHIGH RELIABILITY
Maximum breakdown voltage19.7 V
Minimum breakdown voltage17.8 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AB
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation3000 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
Maximum power dissipation1.61 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage16 V
surface mountYES
technologyAVALANCHE
Terminal surfaceMATTE TIN
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
SURFACE MOUNT 3000 Watt
Transient Voltage Suppressor
- High Reliability controlled devices
- Unidirectional (A) and Bidirectional (CA) construction
- Available in both J-bend and Gull-wing terminations
- Selections for 5.0 to 170 V standoff voltages (V
WM
)
LEVELS
M, MA, MX, MXL
DEVICES
MSMLJ5.0A thru MSMLJ170CA, e3
and MSMLG5.0A thru MSMLG170CA, e3
FEATURES
High reliability controlled devices with wafer fabrication and assembly lot traceability
100 % surge tested devices
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes specify
various screening and conformance inspection options based on MIL-PRF-19500. Refer to
MicroNote 129
for more details on the screening options.
Axial-lead equivalent packages for thru-hole mounting available as M5KP5.0A to M5KP110CA with 5000 W
rating, (consult factory for other surface mount options)
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS compliant devices available by adding an “e3” suffix
3σ lot norm screening performed on Standby Current I
D
Refer to table below
for dimensions
APPLICATIONS / BENEFITS
Suppresses transients up to 3000 watts @ 10/1000 µs
Protection from switching transients and induced RF
Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:
o
Class 1 & 2: MSML5.0A to MSML 170ACA
o
Class 3: MSML5.0A to MSML150CA
o
Class 4: MSML5.0A to MSML75CA
Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:
o
Class 1: MSML5.0A to MSML170CA
o
Class 2: MSML5.0A to MSML90CA
o
Class 3: MSML5.0A to MSML48CA
o
Class 4: MSML5.0A to MSML24CA
Secondary lightning protection per IEC61000-4-5 with 2 Ohms source impedance:
o
Class 2: MSML5.0A to MSML43CA
o
Class 3: MSML5.0A to MSML22CA
o
Class 4: MSML5.0A to MSML10CA
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25 ºC: 3000 watts at 10/1000
μs
(also see Figures 1,2, and 3) with
impulse repetition rate (duty factor) of 0.01 % or less
t
clamping
(0 V to V
BR
min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional
Operating and Storage temperature: -65 ºC to +150 ºC
Thermal resistance: 17.5 ºC/W junction to lead, or 77.5 ºC/W junction to ambient when mounted on FR4
PC board (1 oz Cu) with recommended footprint Steady-State Power dissipation: 6 watts at TL = 45 ºC, or
1.61 watts at TA = 25 ºC when mounted on FR4 PC board with recommended footprint (see page 2)
Forward Surge at 25 ºC: 200 Amps peak impulse of 8.3 ms half-sine wave (unidirectional only)
Solder temperatures: 260 ºC for 10 s (maximum)
RF01003 Rev B, Sept 2011
High Reliability Product Group
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