RN2423(T5LCK,F) datasheet, PDF

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RN2423(T5LCK,F): DescriptionSmall Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon; CategoryDiscrete semiconductor The transistor; File Size574KB，8 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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RN2423(T5LCK,F) Overview

Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

RN2423(T5LCK,F) Parametric

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
Other features	BUILT IN BIAS RESISTANCE RATIO IS 1
Maximum collector current (IC)	0.8 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	70
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Base Number Matches	1

RN2423(T5LCK,F) Related Products

	RN2423(T5LCK,F)	RN2421(TE85L,F)	RN2427(TE85L,F)	RN2421(T5L,PP,F)	RN2422(TE85L,F)
Description	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon	TRANS PREBIAS PNP 50V TO236-3	TRANSISTOR 800 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, 3 PIN, BIP General Purpose Small Signal	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,800MA I(C),SC-59
package instruction	SMALL OUTLINE, R-PDSO-G3	,	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
Maximum collector current (IC)	0.8 A	0.8 A	0.8 A	0.8 A	0.8 A
Minimum DC current gain (hFE)	70	60	90	60	65
Number of components	1	1	1	1	1
Polarity/channel type	PNP	PNP	PNP	PNP	PNP
surface mount	YES	YES	YES	YES	YES
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1	1
Other features	BUILT IN BIAS RESISTANCE RATIO IS 1	-	BUILT IN BIAS RESISTOR RATIO 4.55	BUILT IN BIAS RESISTANCE RATIO IS 1	BUILT IN BIAS RESISTANCE RATIO IS 1
Collector-emitter maximum voltage	50 V	-	50 V	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	-	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
JESD-30 code	R-PDSO-G3	-	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of terminals	3	-	3	3	3
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Terminal form	GULL WING	-	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	-	DUAL	DUAL	DUAL
transistor applications	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING
Nominal transition frequency (fT)	200 MHz	-	200 MHz	200 MHz	200 MHz
Is it Rohs certified?	-	conform to	conform to	-	conform to
Maximum power dissipation(Abs)	-	0.2 W	0.2 W	-	0.2 W

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