SMD Type
SURFACE MOUNT LOW LEAKAGE DIODE
BAV170T; BAV199T
Diodes
SOT-523
+0.1
1.6
-0.1
+0.1
1.0
-0.1
+0.05
0.2
-0.05
Unit: mm
+0.01
0.1
-0.01
2
1
+0.15
1.6
-0.15
Very Low Leakage Current
+0.25
0.3
-0.05
+0.1
0.5
-0.1
0.35
3
1. Base
+0.05
0.75
-0.05
+0.1
-0.1
0.8
2. Emitter
3. Collecter
Absolute Maximum Ratings Ta = 25
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Repetitive Peak Forward Current
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
FRM
@ t = 1.0
Non-Repetitive Peak Forward Surge Current
I
FSM
s
Single Diode
Double Diode
Conditions
Value
85
85
85
60
215
125
500
4
1
0.5
150
833
-65 to + 150
mW
/W
A
mA
Unit
V
V
V
V
mA
@ t = 1.0 ms
@ t = 1.0 s
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Note
P
D
R
èJA
T
j
, T
STG
1.Device mounted on FR-4 PC board with recommended pad layout
+0.05
0.8
-0.05
Ultra-Small Surface Mount Package
0.55
Features
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1
SMD Type
BAV170T; BAV199T
Electrical Characteristics Ta = 25
Parameter
Reverse Breakdown Voltage (Note 2)
Symbol
V
(BR)R
Conditions
I
R
= 100
A
Min
85
Typ
Diodes
Max
Unit
V
I
F
= 1.0 mA
Forward Voltage (Note 2)
V
F
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
Leakage Current (Note 2)
Total Capacitance
Reverse Recovery Time
Note
2.Short duration test pulse used to minimize self-heating effect.
I
R
C
T
t
rr
V
R
= 75 V
V
R
= 75 V; T
j
= 150
f = 1 MHz; V
R
= 0 V
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100
2
0.90
1.0
1.1
1.25
5.0
80
pF
3.0
ìs
nA
V
Marking
Type
Marking
BAV170T
51
BAV199T
52
2
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