Sirenza Microdevices’ SGC-4363Z is a high performance SiGe HBT MMIC
amplifier utilizing a Darlington configuration with a patented active bias
network. The active bias network provides stable current over temperature
and process Beta variations. Designed to run directly from a 3V supply, the
SGC-4363Z does not require a dropping resistor as compared to typical
Darlington amplifiers. The SGC-4363Z is designed for high linearity 3V gain
block applications that require small size and minimal external components.
It is internally matched to 50 ohms.
50-4000 MHz Active Bias Silicon
Germanium Cascadable Gain Block
Pb
Product Features
•
Single Fixed 3V Supply
•
No Dropping Resistor Required
•
Patented Self-Bias Circuitry
•
P1dB = 12.4 dBm at 1950 MHz
•
OIP3 = 26.5 dBm at 1950 MHz
•
Robust 1000V ESD, Class 1C HBM
RoHS Compliant
&
Green
Package
Gain & Return Loss
30
S21
20
V
D
= 3V, I
D
= 54mA
Gain, RL (dB)
10
0
-10
-20
-30
0
0.5
1
1.5
2
2.5
3
3.5
4
Bias Tee Data, Z
S
= Z
L
= 50 Ohms, T
L
= 25C
S22
S11
Frequency (GHz)
Applications
•
PA Driver Amplifier
•
Cellular, PCS, GSM, UMTS, WCDMA
•
IF Amplifier
•
Wireless Data, Satellite
Frequency
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
2400 MHz
1950 MHz
1950 MHz
1930 MHz
Min.
15.6
11.2
Typ.
17.1
12.7
11.8
13.3
12.4
11.8
28.5
26.5
25.5
13.5
12.5
4.0
3
48
OIP
3
Tone Spacing = 1MHz
Pout per tone = -5 dBm
Symbol
G
Parameters
Small Signal Gain
Units
dB
Max.
18.6
14.2
P
1dB
Output Power at 1dB Compression
dBm
11.4
OIP
3
IRL
ORL
NF
V
D
I
D
Rth, j-l
Output Third Order Intercept Point
Input Return Loss
Output Return Loss
Noise Figure
Device Operating Voltage
Device Operating Current
Thermal Resistance (junction to lead)
V
D
= 3.0V
Bias Tee Data
I
D
= 54mA
T
L
= 25°C
dBm
dB
dB
dB
V
mA
°C/W
24.5
9.5
8.5
5.0
54
180
60
Test Conditions:
Z
S
= Z
L
= 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-104977 Rev C
SGC-4363Z 0.05-4.0 GHz Cascadeable MMIC Amplifier
Typical RF Performance at Key Operating Frequencies (Bias Tee)
Symbol
G
OIP
3
P
1dB
IRL
ORL
S
12
NF
Parameter
Small Signal Gain
Output Third Order Intercept Point
Output Power at 1dB Compression
Input Return Loss
Output Return Loss
Reverse Isolation
Noise Figure
V
D
= 3V
T
L
= 25°C
I
D
= 54mA
Z
S
= Z
L
= 50 Ohms
Unit
dB
dBm
dBm
dB
dB
dB
dB
100
18.0
33.5
14.9
26.5
25.0
20.0
2.9
500
17.7
30.5
14.0
21.5
21.0
21.0
3.1
Frequency (MHz)
850
17.1
28.5
13.3
18.5
17.5
21.5
3.5
1950
12.7
26.5
12.4
13.5
12.5
20.0
4.0
2400
11.8
25.5
11.8
14.0
12.0
19.5
4.2
3500
9.4
22.5
10.0
12.0
11.0
19.0
5.1
Test Conditions:
OIP
3
Tone Spacing = 1MHz, Pout per tone = -5 dBm
Typical Performance with Bias Tee, V
D
= 3V, I
D
= 54mA
OIP3 vs. Frequency (-5dBm/tone, 1MHz spacing)
36
34
32
17
P1dB vs. Frequency
15
OIP3 (dBm)
30
28
26
25C
24
22
20
0
0.5
1
1.5
2
2.5
3
3.5
-40C
85C
P1dB (dBm)
13
11
25C
9
-40C
85C
7
0
0.5
1
1.5
2
2.5
3
3.5
Frequency (GHz)
Frequency (GHz)
Absolute Maximum Ratings
Parameter
Max Device Current (I
CE
)
Max Device Voltage (V
CE
)
Max. RF Input Power* (See Note)
Max. Junction Temp. (T
J
)
Operating Temp. Range (T
L
)
Max. Storage Temp.
*Note:
Load condition, Z
L
= 50 Ohms
Absolute Limit
110 mA
4.5 V
+18 dBm
+150°C
-40°C to +85°C
+150°C
Reliability & Qualification Information
Parameter
ESD Rating - Human Body Model (HBM)
Moisture Sensitivity Level
Rating
Class 1C
MSL 1
This product qualification report can be downloaded at
www.sirenza.com
Caution: ESD sensitive
Appropriate precautions in handling, packaging
and testing devices must be observed.
Operation of this device beyond any one of these limits may cause
permanent damage. For reliable continuous operation, the device
voltage and current must not exceed the maximum operating values
specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I
D
V
D
< (T
J
- T
L
) / R
TH
, j-l
T
L
=T
LEAD
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-104977 Rev C
SGC-4363Z 0.05-4.0 GHz Cascadeable MMIC Amplifier
Typical Performance with Bias Tee, V
D
= 3V, I
D
= 54mA
NF vs. Frequency
6.0
80
+25C
Current vs. Voltage
70
5.0
60
50
-40C
+85C
NF (dB)
4.0
Id (mA)
25C
85C
0
0.5
1
1.5
2
2.5
3
3.5
40
30
20
10
3.0
2.0
1.0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
Frequency (GHz)
Vd (V)
|S11| over Frequency
0
-5
|S21| over Frequency
24
20
Gain (dB)
-10
S11 (dB)
16
12
8
4
25C
-40C
85C
-15
-20
-25
-30
0
0.5
1
1.5
2
2.5
3
3.5
4
25C
-40C
85C
0
0.5
1
1.5
2
2.5
3
3.5
4
Frequency (GHz)
Frequency (GHz)
|S12| over Frequency
0
-5
25C
-40C
85C
-15
-20
-25
-30
0
0.5
1
1.5
2
2.5
3
3.5
4
0
-5
-10
|S22| over Frequency
S12 (dB)
-10
S22 (dB)
-15
-20
-25
-30
0
0.5
1
1.5
2
2.5
3
3.5
4
25C
-40C
85C
Frequency (GHz)
Frequency (GHz)
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-104977 Rev C
SGC-4363Z 0.05-4.0 GHz Cascadeable MMIC Amplifier
Basic Application Circuit
Vd
Application Circuit Element Values
Reference
Designator
100-2000MHz
2000-4000MHz
1uF
1000pF
C3
L1
C1
C2
C3
L1
1000pF
100pF
100pF
120nH
2.7pF
6.8pF
6.8pF
39nH
1,2
RF IN
C1
3
SGC-4363Z
6
C2
RF OUT
4,5
1uF
Part Identification Marking & Pinout
1000pF
C3
L1
C1
C2
6
5
4
C43
1
2
3
Pin #
Function
Description
Part / Evaluation Board Ordering Information
Part Number
Description
Reel Size
Devices /
Reel
3
RF IN
RF input pin. This pin requires the use of an external DC
blocking capacitor chosen for the frequency of operation
Connection to ground. Use via holes as close to the device
ground leads as possible to reduce ground inductance and
achieve optimum RF performance
SGC-4363Z
SGC-4363Z-EVB1
Lead Free, RoHs Compliant
100-2000 MHz Evaluation Board
7"
N/A
N/A
3000
N/A
N/A
1,2,4,5
GND
6
RF output and bias pin. This pin requires the use of an
RF OUT /
external DC blocking capacitor chosen for the frequency of
DC BIAS
operation.
SGC-4363Z-EVB2 2000-4000 MHz Evaluation Board
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
4
http://www.sirenza.com
EDS-104977 Rev C
SGC-4363Z 0.05-4.0 GHz Cascadeable MMIC Amplifier
SOT-363 PCB Pad Layout
Dimensions in inches [millimeters]
RF
OUT
RF
IN
Notes:
1. Provide a large ground pad area under device pins 1,
2, 4, and 5 with several plated-through holes placed as
shown.
2. 1-2 ounce finished copper thickness is recommended.
3. RF I/O lines are 50Ω
SOT-363 Nominal Package Dimensions
Dimensions in inches [millimeters]
A link to the SOT-363 package outline drawing with full dimensions and
tolerances may be found on the product web page at www.sirenza.com.
京公网安备 11010802033920号
EEWORLD
