MCR703A Series
Preferred Device
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
PNPN devices designed for high volume, low cost consumer
applications such as temperature, light and speed control; process and
remote control; and warning systems where reliability of operation is
critical.
•
Small Size
•
Passivated Die Surface for Reliability and Uniformity
•
Low Level Triggering and Holding Characteristics
•
Recommend Electrical Replacement for C106
•
Surface Mount Package — Case 369A
•
Device Marking: Device Type, e.g., for MCR703A: CR703A,
Date Code
•
To Obtain “DPAK” in Straight Lead Version (Shipped in Sleeves):
− Add ’1’ Suffix to Device Number, i.e., MCR706A1
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak Repetitive Off−State
(T
C
= −40 to +110°C, Sine Wave,
50 to 60 Hz, Gate Open) MCR703A
MCR704A
MCR706A
MCR708A
Peak Non-Repetitive Off−State Voltage
(Sine Wave, 50 to 60 Hz, Gate Open,
MCR703A
T
C
= −40 to +110°C)
MCR704A
MCR706A
MCR708A
On−State RMS Current
(180° Conduction Angles, T
C
= 90°C)
Average On−State Current
(180° Conduction Angles)
T
C
= −40 to +90°C
T
C
= +100°C
Non-Repetitive Surge Current
(1/2 Sine Wave, 60 Hz, T
J
= 110°C)
(1/2 Sine Wave, 1.5 ms, T
J
= 110°C)
Circuit Fusing (t = 8.3 ms)
Forward Peak Gate Power
(Pulse Width
≤
10
ms,
T
C
= 90°C)
Forward Average Gate Power
(t = 8.3 ms, T
C
= 90°C)
Forward Peak Gate Current
(Pulse Width
≤
10
ms,
T
C
= 90°C)
Operating Junction Temperature Range
Storage Temperature Range
Voltage
(1)
Symbol
V
DRM,
V
RRM
100
200
400
600
V
RSM
150
250
450
650
I
T(RMS)
I
T(AV)
2.6
1.6
I
TSM
25
35
I
2
t
P
GM
P
G(AV)
I
GM
T
J
T
stg
2.6
0.5
0.1
0.2
−40 to
+110
−40 to
+150
A
2
s
Watt
Watt
Amp
°C
°C
Amps
4.0
Amps
Amps
Volts
1
2
3
4
Value
Unit
Volts
1 2
3
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SCRs
4.0 AMPERES RMS
100 thru 600 VOLTS
G
A
K
4
4
1
DPAK
CASE 369C
STYLE 2
23
DPAK
CASE 369D
STYLE 2
PIN ASSIGNMENT
Gate
Anode
Cathode
Anode
ORDERING INFORMATION
Device
MCR703AT4
MCR704AT4
MCR706AT4
MCR708AT4
MCR703AT4−1
MCR704AT4−1
MCR706AT4−1
MCR708AT4−1
Package
DPAK
369C
Shipping
2500/Tape & Reel
DPAK
Straight Lead
369D
75 Units / Rail
Preferred
devices are recommended choices for future use
and best overall value.
(1) V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
©
Semiconductor Components Industries, LLC, 2003
1
October, 2003 − Rev. 5
Publication Order Number:
MCR703A/D
MCR703A Series
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(1)
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Symbol
R
θJC
R
θJA
T
L
Max
8.33
80
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(V
AK
= Rated V
DRM
or V
RRM
; R
GK
= 1 KΩ)
I
DRM
, I
RRM
T
C
= 25°C
T
C
= 110°C
—
—
—
—
10
200
µA
ON CHARACTERISTICS
Peak Forward “On” Voltage
(I
TM
= 8.2 A Peak, Pulse Width = 1 to 2 ms, 2% Duty Cycle)
Gate Trigger Current (Continuous dc)
(2)
(V
AK
= 12 Vdc, R
L
= 24 Ohms)
Gate Trigger Voltage (Continuous dc)
(2)
(V
AK
= 12 Vdc, R
L
= 24 Ohms)
Gate Non-Trigger Voltage
(2)
(V
AK
= 12 Vdc, R
L
= 100 Ohms, T
C
= 110°C)
Holding Current
(V
AK
= 12 Vdc, Gate Open)
(Initiating Current = 200 mA)
Peak Reverse Gate Blocking Voltage
(I
GR
= 10
µA)
Peak Reverse Gate Blocking Current
(V
GR
= 10 V)
Total Turn-On Time
(Source Voltage = 12 V, R
S
= 6 k Ohms)
(I
TM
= 8.2 A, I
GT
= 2 mA, Rated V
DRM
)
(Rise Time = 20 ns, Pulse Width = 10
µs)
T
C
= 25°C
T
C
= −40°C
V
RGM
I
RGM
t
gt
T
C
= 25°C
T
C
= −40°C
T
C
= 25°C
T
C
= −40°C
V
GT
V
GD
I
H
—
—
10
—
—
—
—
12.5
—
2.0
5.0
10
18
1.2
—
Volts
µA
µs
V
TM
I
GT
—
—
—
—
0.2
25
—
—
—
—
75
300
0.8
1.0
—
Volts
Volts
mA
—
—
2.2
Volts
µA
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(V
D
= Rated V
DRM
, R
GK
= 1 KΩ, Exponential Waveform,
T
C
= 110°C)
Repetitive Critical Rate of Rise of On−State Current
(Cf = 60 Hz, I
PK
= 30 A, PW = 100
µs,
diG/dt = 1 A/µs)
(1) Case 369A when surface mounted on minimum pad sizes recommended.
(2) R
GK
current not included in measurement.
dv/dt
—
10
—
V/µs
di/dt
—
—
100
A/µs
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2
MCR703A Series
Voltage Current Characteristic of SCR
+ Current
Anode +
V
TM
on state
I
RRM
at V
RRM
I
H
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
+ Voltage
I
DRM
at V
DRM
Forward Blocking Region
(off state)
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (
°
C)
P(AV), AVERAGE POWER DISSIPATION (WATTS)
110
5.0
4.0
3.0
2.0
1.0
0
30°C
60°C
90°C
120°C
180°C
DC
30°C
105
60°C
90°C
120°C
180°C
DC
100
95
0
1.0
2.0
3.0
4.0
5.0
0
1.0
2.0
3.0
4.0
5.0
I
T(AV)
, AVERAGE ON−STATE CURRENT (AMPS)
I
T(AV)
, AVERAGE ON−STATE CURRENT (AMPS)
Figure 1. Average Current Derating
Figure 2. On−State Power Dissipation
IT, INSTANTANEOUS ON−STATE CURRENT (AMPS)
Typical @ T
J
= 25°C
Maximum @ T
J
= 110°C
r(t) , TRANSIENT RESISTANCE (NORMALIZED)
100
1.0
10
Z
qJC(t)
= R
qJC(t)
•r(t)
Maximum @ T
J
= 25°C
1.0
0.1
0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.01
0.1
1.0
10
100
1000
10,000
V
T
, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)
t, TIME (ms)
Figure 3. On−State Characteristics
Figure 4. Transient Thermal Response
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3
MCR703A Series
35
I GT, GATE TRIGGER CURRENT (
m
A)
1.0
VGT, GATE TRIGGER VOLTAGE (VOLTS)
−20
20
40
60
80
100 110
30
25
0.5
20
15
−40
0
0
−40
−20
0
20
40
60
80
100 110
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Gate Trigger Current versus
Junction Temperature
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
2.0
2.0
IH , HOLDING CURRENT (mA)
1.5
IL , LATCHING CURRENT (mA)
−20
0
20
40
60
80
100 110
1.5
1.0
1.0
0.5
0.5
0
−40
0
−40
−20
0
20
40
60
80
100 110
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Holding Current versus
Junction Temperature
Figure 8. Typical Latching Current versus
Junction Temperature
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4
MCR703A Series
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
6.20
0.244
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
2.58
0.101
3.0
0.118
5.80
0.228
1.6
0.063
6.172
0.243
SCALE 3:1
mm
inches
DPAK
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5