S30E12B datasheet, PDF - EEWORLD Datasheet

S30E12B: DescriptionSilicon Controlled Rectifier, 1050A I(T)RMS, 665000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AB; CategoryAnalog mixed-signal IC Trigger device; File Size66KB，1 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

Download Datasheet Parametric View All

S30E12B Overview

Silicon Controlled Rectifier, 1050A I(T)RMS, 665000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AB

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	DISK BUTTON, O-CEDB-N2
Reach Compliance Code	unknown
Nominal circuit commutation break time	110 µs
Configuration	SINGLE
Critical rise rate of minimum off-state voltage	500 V/us
Maximum DC gate trigger current	150 mA
Maximum DC gate trigger voltage	2.5 V
Maximum holding current	500 mA
JEDEC-95 code	TO-200AB
JESD-30 code	O-CEDB-N2
Maximum leakage current	40 mA
On-state non-repetitive peak current	12500 A
Number of components	1
Number of terminals	2
Maximum on-state current	665000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	DISK BUTTON
Certification status	Not Qualified
Maximum rms on-state current	1050 A
Off-state repetitive peak voltage	1200 V
Repeated peak reverse voltage	1200 V
surface mount	YES
Terminal form	NO LEAD
Terminal location	END
Trigger device type	SCR
Base Number Matches	1

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components