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SGA-3486-TR1

Description
Wide Band Low Power Amplifier, 0MHz Min, 2000MHz Max, BIPolar,
CategoryWireless rf/communication    Radio frequency and microwave   
File Size227KB,7 Pages
ManufacturerQorvo
Websitehttps://www.qorvo.com
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SGA-3486-TR1 Overview

Wide Band Low Power Amplifier, 0MHz Min, 2000MHz Max, BIPolar,

SGA-3486-TR1 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Characteristic impedance50 Ω
Gain19.5 dB
Maximum input power (CW)13 dBm
JESD-609 codee0
Maximum operating frequency2000 MHz
Minimum operating frequency
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
RF/Microwave Device TypesWIDE BAND LOW POWER
Terminal surfaceTIN LEAD
Maximum voltage standing wave ratio1.3
Base Number Matches1
Preliminary
Product Description
Stanford Microdevices’ SGA-3486 is a high performance
cascadeable 50-ohm amplifier designed for operation at
voltages as low as 2.9V. This RFIC uses the latest Silicon
Germanium Heterostructure Bipolar Transistor (SiGe HBT)
process featuring 1 micron emitters with F
T
up to 65 GHz.
This circuit uses a darlington pair topology with resistive
feedback for broadband performance as well as stability
over its entire temperature range. Internally matched to
50 ohm impedance, the SGA-3486 requires only DC
blocking and bypass capacitors for external components.
SGA-3486
DC-2000 MHz Silicon Germanium
Cascadeable Gain Block
Small Signal Gain vs. Frequency
24
18
Product Features
DC-2000 MHz Operation
Single Voltage Supply
High Output Intercept: +24.6dBm typ. at 850 MHz
Low Current Draw: 35mA at 2.9V typ.
Low Noise Figure: 2.8dB typ. at 850 MHz
Applications
Oscillator Amplifiers
PA for Low Power Applications
IF/ RF Buffer Amplifier
Drivers for CATV Amplifiers
dB
12
6
1900
2400
3500
5000
100
500
900
0
Frequency MHz
Symbol
P
1dB
S
21
S
12
S
11
S
22
IP
3
NF
T
D
V
D
Parameters: Test Conditions:
Z
0
= 50 Ohms, Id = 35 mA, T = 25ºC
Output Power at 1dB Compression
Small Signal Gain
Reverse Isolation
Input VSWR
Output VSWR
Third Order Intercept Point
Noise Figure
Group Delay
Device Voltage
f = 850 MHz
f = 1950 MHz
f = DC - 1000 MHz
f = 1000 - 2000 MHz
f = DC - 2000 MHz
f = DC - 2000 MHz
f = DC - 2000 MHz
f = 850 MHz
f = 1950 MHz
f = DC - 1000 MHz
f = 1000 - 2000 MHz
f = 1000 MHz
Units
dB m
dB m
dB
dB
dB
-
-
dB m
dB m
dB
dB
pS
V
Min.
Typ.
12.7
12.5
Max.
19.0
21.2
18.0
23.1
1.67:1
1.33:1
24.6
26.9
2.8
3.4
119.0
2.6
2.9
3.2
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-100635 Rev A

SGA-3486-TR1 Related Products

SGA-3486-TR1 SGA-3486-TR2
Description Wide Band Low Power Amplifier, 0MHz Min, 2000MHz Max, BIPolar, Wide Band Low Power Amplifier, 0MHz Min, 2000MHz Max, BIPolar,
Reach Compliance Code unknown unknown
Characteristic impedance 50 Ω 50 Ω
Gain 19.5 dB 19.5 dB
Maximum input power (CW) 13 dBm 13 dBm
JESD-609 code e0 e0
Maximum operating frequency 2000 MHz 2000 MHz
Maximum operating temperature 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C
RF/Microwave Device Types WIDE BAND LOW POWER WIDE BAND LOW POWER
Terminal surface TIN LEAD Tin/Lead (Sn/Pb)
Maximum voltage standing wave ratio 1.3 1.3
Base Number Matches 1 1

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