IPP04N03LA datasheet, PDF - EEWORLD Datasheet

IPP04N03LA: DescriptionOptiMOS㈢2 Power-Transistor; CategoryDiscrete semiconductor The transistor; File Size298KB，10 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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IPP04N03LA Overview

OptiMOS㈢2 Power-Transistor

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	290 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	25 V
Maximum drain current (Abs) (ID)	80 A
Maximum drain current (ID)	80 A
Maximum drain-source on-resistance	0.0067 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	107 W
Maximum pulsed drain current (IDM)	385 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	MATTE TIN
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

	IPP04N03LA	04N03LA	IPI04N03LA	IPI04N03LA_07
Description	OptiMOS㈢2 Power-Transistor	OptiMOS㈢2 Power-Transistor	OptiMOS㈢2 Power-Transistor	OptiMOS㈢2 Power-Transistor

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