Rectifier Diode, 1 Element, 0.065A, 3000V V(RRM), Silicon,
Parameter Name | Attribute value |
package instruction | E-LELF-R2 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Configuration | SINGLE |
Diode component materials | SILICON |
Diode type | RECTIFIER DIODE |
Maximum forward voltage (VF) | 10 V |
JESD-30 code | E-LELF-R2 |
Maximum non-repetitive peak forward current | 5 A |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 175 °C |
Maximum output current | 0.065 A |
Package body material | GLASS |
Package shape | ELLIPTICAL |
Package form | LONG FORM |
Certification status | Not Qualified |
Maximum repetitive peak reverse voltage | 3000 V |
Maximum reverse recovery time | 0.15 µs |
surface mount | YES |
Terminal form | WRAP AROUND |
Terminal location | END |
Base Number Matches | 1 |
SHB30FSMS | SHB40FSMS | SHB15FSMS | SHB20FSMS | |
---|---|---|---|---|
Description | Rectifier Diode, 1 Element, 0.065A, 3000V V(RRM), Silicon, | Rectifier Diode, 1 Element, 0.065A, 4000V V(RRM), Silicon, | Rectifier Diode, 1 Element, 0.08A, 1500V V(RRM), Silicon, | Rectifier Diode, 1 Element, 0.08A, 2000V V(RRM), Silicon, |
Reach Compliance Code | compliant | compliant | compliant | compliant |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
Diode component materials | SILICON | SILICON | SILICON | SILICON |
Diode type | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
Maximum forward voltage (VF) | 10 V | 10 V | 9 V | 9 V |
JESD-30 code | E-LELF-R2 | E-LELF-R2 | E-LELF-R2 | E-LELF-R2 |
Maximum non-repetitive peak forward current | 5 A | 5 A | 5 A | 5 A |
Number of components | 1 | 1 | 1 | 1 |
Number of terminals | 2 | 2 | 2 | 2 |
Maximum operating temperature | 175 °C | 175 °C | 175 °C | 175 °C |
Maximum output current | 0.065 A | 0.065 A | 0.08 A | 0.08 A |
Package body material | GLASS | GLASS | GLASS | GLASS |
Package shape | ELLIPTICAL | ELLIPTICAL | ELLIPTICAL | ELLIPTICAL |
Package form | LONG FORM | LONG FORM | LONG FORM | LONG FORM |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
Maximum repetitive peak reverse voltage | 3000 V | 4000 V | 1500 V | 2000 V |
Maximum reverse recovery time | 0.15 µs | 0.15 µs | 0.15 µs | 0.15 µs |
surface mount | YES | YES | YES | YES |
Terminal form | WRAP AROUND | WRAP AROUND | WRAP AROUND | WRAP AROUND |
Terminal location | END | END | END | END |
package instruction | E-LELF-R2 | E-LELF-R2 | E-LELF-R2 | - |
Base Number Matches | 1 | 1 | 1 | - |