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SHB30FSMS

Description
Rectifier Diode, 1 Element, 0.065A, 3000V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size188KB,2 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
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SHB30FSMS Overview

Rectifier Diode, 1 Element, 0.065A, 3000V V(RRM), Silicon,

SHB30FSMS Parametric

Parameter NameAttribute value
package instructionE-LELF-R2
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)10 V
JESD-30 codeE-LELF-R2
Maximum non-repetitive peak forward current5 A
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current0.065 A
Package body materialGLASS
Package shapeELLIPTICAL
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage3000 V
Maximum reverse recovery time0.15 µs
surface mountYES
Terminal formWRAP AROUND
Terminal locationEND
Base Number Matches1

SHB30FSMS Related Products

SHB30FSMS SHB40FSMS SHB15FSMS SHB20FSMS
Description Rectifier Diode, 1 Element, 0.065A, 3000V V(RRM), Silicon, Rectifier Diode, 1 Element, 0.065A, 4000V V(RRM), Silicon, Rectifier Diode, 1 Element, 0.08A, 1500V V(RRM), Silicon, Rectifier Diode, 1 Element, 0.08A, 2000V V(RRM), Silicon,
Reach Compliance Code compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 10 V 10 V 9 V 9 V
JESD-30 code E-LELF-R2 E-LELF-R2 E-LELF-R2 E-LELF-R2
Maximum non-repetitive peak forward current 5 A 5 A 5 A 5 A
Number of components 1 1 1 1
Number of terminals 2 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C
Maximum output current 0.065 A 0.065 A 0.08 A 0.08 A
Package body material GLASS GLASS GLASS GLASS
Package shape ELLIPTICAL ELLIPTICAL ELLIPTICAL ELLIPTICAL
Package form LONG FORM LONG FORM LONG FORM LONG FORM
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 3000 V 4000 V 1500 V 2000 V
Maximum reverse recovery time 0.15 µs 0.15 µs 0.15 µs 0.15 µs
surface mount YES YES YES YES
Terminal form WRAP AROUND WRAP AROUND WRAP AROUND WRAP AROUND
Terminal location END END END END
package instruction E-LELF-R2 E-LELF-R2 E-LELF-R2 -
Base Number Matches 1 1 1 -
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