MMBZ18VAL datasheet, PDF - EEWORLD Datasheet

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MMBZ18VAL: Description40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB; CategoryDiscrete semiconductor diode; File Size64KB，15 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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MMBZ18VAL Overview

40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB

MMBZ18VAL Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NXP
Parts packaging code	SOT-23
package instruction	PLASTIC PACKAGE-3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum breakdown voltage	18.9 V
Minimum breakdown voltage	17.1 V
Breakdown voltage nominal value	18 V
Maximum clamping voltage	25 V
Configuration	COMMON ANODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	TO-236AB
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak reverse power dissipation	40 W
Number of components	2
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
polarity	UNIDIRECTIONAL
Maximum power dissipation	0.36 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	14.5 V
surface mount	YES
technology	AVALANCHE
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30

MMBZ18VAL Related Products

	MMBZ18VAL	MMBZ12VAL	MMBZXVAL	MMBZ15VAL
Description	40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB	40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB	40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB	40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB
Maximum breakdown voltage	18.9 V	12.6 V	15.75 V	15.75 V
Minimum breakdown voltage	17.1 V	11.4 V	14.25 V	14.25 V
Diode component materials	SILICON	SILICON	silicon	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS voltage SUPPRESSOR diode	TRANS VOLTAGE SUPPRESSOR DIODE
Number of components	2	2	2	2
Number of terminals	3	3	3	3
polarity	UNIDIRECTIONAL	UNIDIRECTIONAL	unidirectional	UNIDIRECTIONAL
surface mount	YES	YES	Yes	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	pair	DUAL
Is it Rohs certified?	conform to	conform to	-	conform to
Maker	NXP	NXP	-	NXP
Parts packaging code	SOT-23	SOT-23	-	SOT-23
package instruction	PLASTIC PACKAGE-3	PLASTIC PACKAGE-3	-	PLASTIC PACKAGE-3
Contacts	3	3	-	3
Reach Compliance Code	compli	compli	-	compli
ECCN code	EAR99	EAR99	-	EAR99
Breakdown voltage nominal value	18 V	12 V	-	15 V
Maximum clamping voltage	25 V	17 V	-	21 V
Configuration	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	-	COMMON ANODE, 2 ELEMENTS
JEDEC-95 code	TO-236AB	TO-236AB	-	TO-236AB
JESD-30 code	R-PDSO-G3	R-PDSO-G3	-	R-PDSO-G3
JESD-609 code	e3	e3	-	e3
Humidity sensitivity level	1	1	-	1
Maximum non-repetitive peak reverse power dissipation	40 W	40 W	-	40 W
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	-	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	-	260
Maximum power dissipation	0.36 W	0.36 W	-	0.36 W
Certification status	Not Qualified	Not Qualified	-	Not Qualified
Maximum repetitive peak reverse voltage	14.5 V	8.5 V	-	12 V
technology	AVALANCHE	AVALANCHE	-	AVALANCHE
Terminal surface	Tin (Sn)	Tin (Sn)	-	Tin (Sn)
Maximum time at peak reflow temperature	30	30	-	30

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