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NAND01GR3A2B

Description
Flash, 128MX8, 35ns, DIE
Categorystorage    storage   
File Size950KB,56 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Download Datasheet Parametric View All

NAND01GR3A2B Overview

Flash, 128MX8, 35ns, DIE

NAND01GR3A2B Parametric

Parameter NameAttribute value
Parts packaging codeDIE
package instructionDIE
Reach Compliance Codeunknown
ECCN code3A991.B.1.A
Maximum access time35 ns
JESD-30 codeX-XUUC-N
memory density1073741824 bit
Memory IC TypeFLASH
memory width8
Number of functions1
word count134217728 words
character code128000000
Operating modeASYNCHRONOUS
organize128MX8
Package body materialUNSPECIFIED
encapsulated codeDIE
Package shapeUNSPECIFIED
Package formUNCASED CHIP
Parallel/SerialPARALLEL
Programming voltage1.8 V
Certification statusNot Qualified
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Terminal formNO LEAD
Terminal locationUPPER
typeNAND TYPE
Base Number Matches1
NAND128-A, NAND256-A
NAND512-A, NAND01G-A
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16)
528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
Up to 1 Gbit memory array
Up to 32 Mbit spare area
Cost effective solutions for mass storage
applications
x8 or x16 bus width
Multiplexed Address/ Data
Pinout compatibility for all densities
1.8V device: V
DD
= 1.7 to 1.95V
3.0V device: V
DD
= 2.7 to 3.6V
Figure 1. Packages
NAND INTERFACE
TSOP48 12 x 20mm
SUPPLY VOLTAGE
PAGE SIZE
x8 device: (512 + 16 spare) Bytes
x16 device: (256 + 8 spare) Words
x8 device: (16K + 512 spare) Bytes
x16 device: (8K + 256 spare) Words
USOP48 12 x 17 x 0.65mm
FBGA
BLOCK SIZE
VFBGA55 8 x 10 x 1mm
VFBGA63 9 x 11 x 1mm
PAGE READ / PROGRAM
Random access: 12µs (3V)/15us (1.8V)
(max)
Sequential access: 50ns (min)
Page program time: 200µs (typ)
Fast page copy without external buffering
HARDWARE DATA PROTECTION
Program/Erase locked during Power
transitions
DATA INTEGRITY
100,000 Program/Erase cycles
10 years Data Retention
Lead-Free Components are Compliant
with the RoHS Directive
Error Correction Code software and
hardware models
Bad Blocks Management and Wear
Leveling algorithms
File System OS Native reference software
Hardware simulation models
1/56
COPY BACK PROGRAM MODE
FAST BLOCK ERASE
Block erase time: 2ms (Typ)
RoHS COMPLIANCE
STATUS REGISTER
ELECTRONIC SIGNATURE
CHIP ENABLE ‘DON’T CARE’
Simple interface with microcontroller
DEVELOPMENT TOOLS
SERIAL NUMBER OPTION
June 2005

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